IRF630NSPBFInfineon
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    • Manufacturer No：
      IRF630NSPBF
    • Manufacturer：
      Infineon
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      IRF630NSPBF
    • SKU：
      2712291
    • Description：
      MOSFET N-CH 200V 9.3A D2PAK

    User Guide

    User Guide

    IRF630NSPBF Details

    MOSFET N-CH 200V 9.3A D2PAK

    IRF630NSPBF Specification Parameters

    • RoHS Status: ROHS3 Compliant
    • Number of Terminations: 2
    • Mount: Surface Mount
    • ECCN Code: EAR99
    • JESD-609 Code: e3
    • Contact Plating: Tin
    • Number of Pins: 3
    • REACH SVHC: No SVHC
    • Voltage - Rated DC: 200V
    • Time@Peak Reflow Temperature-Max (s): 30
    • Transistor Element Material: SILICON
    • Gate to Source Voltage (Vgs): 20V
    • FET Type: N-Channel
    • Published: 1997
    • Threshold Voltage: 4V
    • Operating Temperature: -55°C~175°C TJ
    • Vgs (Max): ±20V
    • Case Connection: DRAIN
    • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
    • Vgs(th) (Max) @ Id: 4V @ 250μA
    • Length: 10.67mm
    • Width: 9.65mm
    • Turn-Off Delay Time: 27 ns
    • Continuous Drain Current (ID): 9.3A
    • Turn On Delay Time: 7.9 ns
    • Additional Feature: AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
    • Avalanche Energy Rating (Eas): 94 mJ
    • Power Dissipation-Max: 82W Tc
    • Input Capacitance (Ciss) (Max) @ Vds: 575pF @ 25V
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mounting Type: Surface Mount
    • Number of Elements: 1
    • Radiation Hardening: No
    • Lead Free: Lead Free
    • Packaging: Tube
    • Terminal Form: GULL WING
    • Peak Reflow Temperature (Cel): 260
    • Drain to Source Breakdown Voltage: 200V
    • Drive Voltage (Max Rds On,Min Rds On): 10V
    • Element Configuration: Single
    • Part Status: Discontinued
    • Technology: MOSFET (Metal Oxide)
    • Height: 4.83mm
    • Transistor Application: SWITCHING
    • Operating Mode: ENHANCEMENT MODE
    • JESD-30 Code: R-PSSO-G2
    • Subcategory: FET General Purpose Power
    • Fall Time (Typ): 15 ns
    • Resistance: 300mOhm
    • Series: HEXFET?
    • Rise Time: 14 ns
    • Current Rating: 9.3A
    • Nominal Vgs: 4 V
    • Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
    • Power Dissipation: 82W
    • Current - Continuous Drain (Id) @ 25°C: 9.3A Tc
    • Recovery Time: 176 ns
    • Rds On (Max) @ Id, Vgs: 300m Ω @ 5.4A, 10V
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    Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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