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- Manufacturer No：IRF7492TRPBF
- Manufacturer：Infineon
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IRF7492TRPBF
- SKU：2712530
- Description：MOSFET N-CH 200V 3.7A 8-SOIC
User Guide
User Guide
IRF7492TRPBF Details
MOSFET N-CH 200V 3.7A 8-SOIC
IRF7492TRPBF Specification Parameters
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Elements: 1
- Radiation Hardening: No
- Min Operating Temperature: -55°C
- Number of Pins: 8
- Drain to Source Breakdown Voltage: 200V
- Published: 2007
- Element Configuration: Single
- Operating Temperature: -55°C~150°C TJ
- FET Type: N-Channel
- Vgs (Max): ±20V
- Turn On Delay Time: 15 ns
- Height: 1.4986mm
- Fall Time (Typ): 14 ns
- Continuous Drain Current (ID): 3.7A
- Turn-Off Delay Time: 27 ns
- Length: 4.9784mm
- Resistance: 79mOhm
- Gate Charge (Qg) (Max) @ Vgs: 59nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1820pF @ 25V
- Rds On Max: 79 mΩ
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- RoHS Status: RoHS Compliant
- Lead Free: Lead Free
- Part Status: Obsolete
- Drain to Source Voltage (Vdss): 200V
- Max Operating Temperature: 150°C
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Gate to Source Voltage (Vgs): 20V
- Package / Case: 8-SOIC (0.154, 3.90mm Width)
- Technology: MOSFET (Metal Oxide)
- Power Dissipation: 2.5W
- Width: 3.9878mm
- Series: HEXFET?
- Vgs(th) (Max) @ Id: 2.5V @ 250μA
- Supplier Device Package: 8-SO
- Power Dissipation-Max: 2.5W Ta
- Rise Time: 13ns
- Drain to Source Resistance: 79mOhm
- Current - Continuous Drain (Id) @ 25°C: 3.7A Ta
- Input Capacitance: 1.82nF
- Rds On (Max) @ Id, Vgs: 79mOhm @ 2.2A, 10V
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Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.
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