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- Manufacturer No：IRF7907TRPBF
- Manufacturer：Infineon
- Category：Transistors - FETs, MOSFETs - Arrays
- Datasheet：IRF7907TRPBF
- SKU：2712651
- Description：MOSFET 2N-CH 30V 9.1A/11A 8-SOIC
User Guide
User Guide
IRF7907TRPBF Details
MOSFET 2N-CH 30V 9.1A/11A 8-SOIC
IRF7907TRPBF Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Radiation Hardening: No
- Lead Free: Lead Free
- Number of Terminations: 8
- Terminal Form: GULL WING
- Terminal Finish: Matte Tin (Sn)
- Element Configuration: Dual
- Transistor Element Material: SILICON
- Power Dissipation: 2W
- Drain to Source Breakdown Voltage: 30V
- Package / Case: 8-SOIC (0.154, 3.90mm Width)
- Subcategory: FET General Purpose Power
- Continuous Drain Current (ID): 11A
- Height: 1.4986mm
- FET Feature: Logic Level Gate
- Length: 4.9784mm
- Vgs(th) (Max) @ Id: 2.35V @ 25μA
- Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 15V
- Current - Continuous Drain (Id) @ 25°C: 9.1A 11A
- RoHS Status: ROHS3 Compliant
- Number of Elements: 2
- Mount: Surface Mount
- ECCN Code: EAR99
- JESD-609 Code: e3
- Number of Pins: 8
- Factory Lead Time: 12 Weeks
- Peak Reflow Temperature (Cel): 260
- Time@Peak Reflow Temperature-Max (s): 30
- Published: 2008
- Max Power Dissipation: 2W
- Gate to Source Voltage (Vgs): 20V
- Operating Temperature: -55°C~150°C TJ
- Operating Mode: ENHANCEMENT MODE
- FET Technology: METAL-OXIDE SEMICONDUCTOR
- Width: 3.9878mm
- Series: HEXFET?
- FET Type: 2 N-Channel (Dual)
- Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
- Avalanche Energy Rating (Eas): 15 mJ
- Rds On (Max) @ Id, Vgs: 16.4m Ω @ 9.1A, 10V
- Base Part Number: IRF7907PBF
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Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.
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