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- Manufacturer No：IRFB7734PBF
- Manufacturer：Infineon
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IRFB7734PBF
- SKU：2713013
- Description：MOSFET N-CH 75V 183A TO220
User Guide
User Guide
IRFB7734PBF Details
MOSFET N-CH 75V 183A TO220
IRFB7734PBF Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- ECCN Code: EAR99
- Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
- Factory Lead Time: 12 Weeks
- Number of Pins: 3
- Element Configuration: Single
- Gate to Source Voltage (Vgs): 20V
- FET Type: N-Channel
- Width: 4.83mm
- Vgs (Max): ±20V
- Turn On Delay Time: 20 ns
- Fall Time (Typ): 100 ns
- Weight: 6.000006g
- Series: HEXFET?, StrongIRFET?
- Vgs(th) (Max) @ Id: 3.7V @ 250μA
- Power Dissipation-Max: 290W Tc
- Rds On (Max) @ Id, Vgs: 3.5m Ω @ 100A, 10V
- Current - Continuous Drain (Id) @ 25°C: 183A Tc
- RoHS Status: ROHS3 Compliant
- Mounting Type: Through Hole
- Number of Channels: 1
- Lead Free: Lead Free
- Peak Reflow Temperature (Cel): NOT SPECIFIED
- Packaging: Tube
- REACH SVHC: No SVHC
- Drain to Source Voltage (Vdss): 75V
- Published: 2001
- Technology: MOSFET (Metal Oxide)
- Operating Temperature: -55°C~175°C TJ
- Package / Case: TO-220-3
- Height: 16.51mm
- Length: 10.67mm
- Drive Voltage (Max Rds On,Min Rds On): 6V 10V
- Continuous Drain Current (ID): 183A
- Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V
- Turn-Off Delay Time: 124 ns
- Rise Time: 123ns
- Input Capacitance (Ciss) (Max) @ Vds: 10150pF @ 25V
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Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.
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