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  • Manufacturer No:
    IRFR18N15DTRPBF
  • Manufacturer:
    Infineon
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    IRFR18N15DTRPBF
  • SKU:
    2714507
  • Description:
    MOSFET N-CH 150V 18A DPAK

IRFR18N15DTRPBF Details

MOSFET N-CH 150V 18A DPAK

IRFR18N15DTRPBF Specification Parameters

  • RoHS Status: ROHS3 Compliant
  • Number of Terminations: 2
  • Mount: Surface Mount
  • Number of Elements: 1
  • Radiation Hardening: No
  • Number of Pins: 3
  • REACH SVHC: No SVHC
  • Terminal Finish: Matte Tin (Sn) - with Nickel (Ni) barrier
  • Drain to Source Breakdown Voltage: 150V
  • Time@Peak Reflow Temperature-Max (s): 30
  • Drive Voltage (Max Rds On,Min Rds On): 10V
  • Element Configuration: Single
  • Part Status: Not For New Designs
  • FET Type: N-Channel
  • Transistor Application: SWITCHING
  • Operating Mode: ENHANCEMENT MODE
  • Case Connection: DRAIN
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Turn-Off Delay Time: 15 ns
  • Current Rating: 18A
  • Series: HEXFET?
  • JEDEC-95 Code: TO-252AA
  • Height: 2.3876mm
  • Length: 6.7056mm
  • Pulsed Drain Current-Max (IDM): 72A
  • Fall Time (Typ): 9.8 ns
  • Current - Continuous Drain (Id) @ 25°C: 18A Tc
  • Vgs(th) (Max) @ Id: 5.5V @ 250μA
  • Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V
  • Rds On (Max) @ Id, Vgs: 125m Ω @ 11A, 10V
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mounting Type: Surface Mount
  • Packaging: Tape & Reel (TR)
  • ECCN Code: EAR99
  • JESD-609 Code: e3
  • Terminal Form: GULL WING
  • Peak Reflow Temperature (Cel): 260
  • Voltage - Rated DC: 150V
  • Dual Supply Voltage: 150V
  • Threshold Voltage: 5.5V
  • Transistor Element Material: SILICON
  • Gate to Source Voltage (Vgs): 30V
  • Published: 2004
  • Technology: MOSFET (Metal Oxide)
  • Operating Temperature: -55°C~175°C TJ
  • JESD-30 Code: R-PSSO-G2
  • Subcategory: FET General Purpose Power
  • Rise Time: 25 ns
  • Vgs (Max): ±30V
  • Continuous Drain Current (ID): 18A
  • Width: 6.22mm
  • Power Dissipation: 110W
  • Lead Free: Contains Lead, Lead Free
  • Resistance: 125mOhm
  • Turn On Delay Time: 8.8 ns
  • Power Dissipation-Max: 110W Tc
  • Avalanche Energy Rating (Eas): 200 mJ
  • Nominal Vgs: 5.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 25V

Infineon — Manufacturer Introduction

Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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