IRLR8726TRPBFInfineon
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    Inventory:37419
    • Qty Unit Price price
    • 1 $104.064 $104.064
    • 10 $103.033 $1030.33
    • 100 $102.012 $10201.2
    • 1000 $101.001 $101001
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    • Manufacturer No：
      IRLR8726TRPBF
    • Manufacturer：
      Infineon
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      IRLR8726TRPBF
    • SKU：
      2720612
    • Description：
      MOSFET N-CH 30V 86A DPAK

    User Guide

    User Guide

    IRLR8726TRPBF Details

    MOSFET N-CH 30V 86A DPAK

    IRLR8726TRPBF Specification Parameters

    • Part Status: Active
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mounting Type: Surface Mount
    • Packaging: Tape & Reel (TR)
    • ECCN Code: EAR99
    • JESD-609 Code: e3
    • Number of Pins: 3
    • Peak Reflow Temperature (Cel): 260
    • Gate to Source Voltage (Vgs): 12V
    • Published: 2007
    • Terminal Position: SINGLE
    • Power Dissipation: 75W
    • Technology: MOSFET (Metal Oxide)
    • Operating Temperature: -55°C~175°C TJ
    • Vgs (Max): ±20V
    • Configuration: SINGLE WITH BUILT-IN DIODE
    • Subcategory: FET General Purpose Power
    • Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
    • Turn On Delay Time: 12 ns
    • Width: 6.22mm
    • JEDEC-95 Code: TO-252AA
    • Length: 6.7056mm
    • Continuous Drain Current (ID): 86A
    • Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V
    • Vgs(th) (Max) @ Id: 2.35V @ 50μA
    • Rds On (Max) @ Id, Vgs: 5.8m Ω @ 25A, 10V
    • RoHS Status: ROHS3 Compliant
    • Number of Terminations: 2
    • Mount: Surface Mount
    • Number of Elements: 1
    • Radiation Hardening: No
    • Factory Lead Time: 12 Weeks
    • Terminal Form: GULL WING
    • Terminal Finish: Matte Tin (Sn) - with Nickel (Ni) barrier
    • Time@Peak Reflow Temperature-Max (s): 30
    • Transistor Element Material: SILICON
    • Drain to Source Breakdown Voltage: 30V
    • FET Type: N-Channel
    • Transistor Application: SWITCHING
    • Operating Mode: ENHANCEMENT MODE
    • JESD-30 Code: R-PSSO-G2
    • Case Connection: DRAIN
    • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
    • Turn-Off Delay Time: 15 ns
    • Series: HEXFET?
    • Fall Time (Typ): 16 ns
    • Height: 2.3876mm
    • Rise Time: 49 ns
    • Power Dissipation-Max: 75W Tc
    • Drain-source On Resistance-Max: 0.058Ohm
    • Current - Continuous Drain (Id) @ 25°C: 86A Tc
    • Input Capacitance (Ciss) (Max) @ Vds: 2150pF @ 15V
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    Infineon — Manufacturer Introduction

    Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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