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- Manufacturer No：IRL520NPBF
- Manufacturer：Infineon
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IRL520NPBF
- SKU：2721461
- Description：In a Tube of 50, IRL520NPBF N-Channel MOSFET, 10 A, 100 V LogicFET, 3-Pin TO-220AB Infineon
User Guide
User Guide
IRL520NPBF Details
In a Tube of 50, IRL520NPBF N-Channel MOSFET, 10 A, 100 V LogicFET, 3-Pin TO-220AB Infineon
IRL520NPBF Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- Number of Elements: 1
- JESD-609 Code: e3
- Factory Lead Time: 12 Weeks
- Number of Terminations: 3
- Qualification Status: Not Qualified
- Voltage - Rated DC: 100V
- Dual Supply Voltage: 100V
- Transistor Element Material: SILICON
- Gate to Source Voltage (Vgs): 16V
- Continuous Drain Current (ID): 10A
- FET Type: N-Channel
- Transistor Application: SWITCHING
- Operating Temperature: -55°C~175°C TJ
- Published: 1998
- Case Connection: DRAIN
- JEDEC-95 Code: TO-220AB
- Peak Reflow Temperature (Cel): 250
- Turn On Delay Time: 4 ns
- Resistance: 220mOhm
- Nominal Vgs: 2 V
- Vgs (Max): ±16V
- Power Dissipation: 48W
- Current - Continuous Drain (Id) @ 25°C: 10A Tc
- Power Dissipation-Max: 48W Tc
- Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 25V
- Additional Feature: AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE
- RoHS Status: ROHS3 Compliant
- Mounting Type: Through Hole
- Termination: Through Hole
- ECCN Code: EAR99
- Lead Free: Lead Free
- Packaging: Tube
- Number of Pins: 3
- REACH SVHC: No SVHC
- Drain to Source Breakdown Voltage: 100V
- Time@Peak Reflow Temperature-Max (s): 30
- Element Configuration: Single
- Current Rating: 10A
- Threshold Voltage: 2V
- Technology: MOSFET (Metal Oxide)
- Terminal Finish: MATTE TIN OVER NICKEL
- Operating Mode: ENHANCEMENT MODE
- Package / Case: TO-220-3
- Subcategory: FET General Purpose Power
- Rise Time: 35 ns
- Series: HEXFET?
- Fall Time (Typ): 22 ns
- Vgs(th) (Max) @ Id: 2V @ 250μA
- Turn-Off Delay Time: 23 ns
- Recovery Time: 160 ns
- Drive Voltage (Max Rds On,Min Rds On): 4V 10V
- Width: 4.69mm
- Height: 8.77mm
- Length: 10.5156mm
- Avalanche Energy Rating (Eas): 85 mJ
- Rds On (Max) @ Id, Vgs: 180m Ω @ 6A, 10V
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Infineon — Manufacturer Introduction
Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.
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