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- Manufacturer No：IRLR7833
- Manufacturer：Infineon
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IRLR7833
- SKU：2723489
- Description：MOSFET N-CH 30V 140A DPAK
User Guide
User Guide
IRLR7833 Details
MOSFET N-CH 30V 140A DPAK
IRLR7833 Specification Parameters
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mounting Type: Surface Mount
- ECCN Code: EAR99
- Surface Mount: YES
- Packaging: Tube
- JESD-609 Code: e0
- Time@Peak Reflow Temperature-Max (s): 30
- Transistor Element Material: SILICON
- Drain to Source Voltage (Vdss): 30V
- Published: 2004
- Technology: MOSFET (Metal Oxide)
- Transistor Application: SWITCHING
- Operating Mode: ENHANCEMENT MODE
- Peak Reflow Temperature (Cel): 245
- Configuration: SINGLE WITH BUILT-IN DIODE
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Series: HEXFET?
- Vgs(th) (Max) @ Id: 2.3V @ 250μA
- Drain-source On Resistance-Max: 0.0045Ohm
- Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V
- Avalanche Energy Rating (Eas): 530 mJ
- Input Capacitance (Ciss) (Max) @ Vds: 4010pF @ 15V
- Number of Terminations: 2
- Number of Elements: 1
- RoHS Status: Non-RoHS Compliant
- Part Status: Obsolete
- Qualification Status: Not Qualified
- Terminal Form: GULL WING
- Terminal Finish: Tin/Lead (Sn/Pb)
- Terminal Position: SINGLE
- DS Breakdown Voltage-Min: 30V
- FET Type: N-Channel
- Drain Current-Max (Abs) (ID): 30A
- Operating Temperature: -55°C~175°C TJ
- Vgs (Max): ±20V
- JESD-30 Code: R-PSSO-G2
- Case Connection: DRAIN
- Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
- JEDEC-95 Code: TO-252AA
- Power Dissipation-Max: 140W Tc
- Pulsed Drain Current-Max (IDM): 560A
- Current - Continuous Drain (Id) @ 25°C: 140A Tc
- Rds On (Max) @ Id, Vgs: 4.5m Ω @ 15A, 10V
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Infineon — Manufacturer Introduction
Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.
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