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- Manufacturer No：IRF6623TR1
- Manufacturer：Infineon
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IRF6623TR1
- SKU：2728766
- Description：MOSFET N-CH 20V 16A DIRECTFET
User Guide
User Guide
IRF6623TR1 Details
MOSFET N-CH 20V 16A DIRECTFET
IRF6623TR1 Specification Parameters
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Radiation Hardening: No
- Lead Free: Lead Free
- Min Operating Temperature: -40°C
- Moisture Sensitivity Level (MSL): 3 (168 Hours)
- Published: 2005
- Voltage - Rated DC: 20V
- Drain to Source Voltage (Vdss): 20V
- Dual Supply Voltage: 20V
- Technology: MOSFET (Metal Oxide)
- Vgs (Max): ±20V
- Threshold Voltage: 2.2V
- Reverse Recovery Time: 20 ns
- Series: HEXFET?
- Rise Time: 40ns
- Vgs(th) (Max) @ Id: 2.2V @ 250μA
- Drain to Source Resistance: 4.4Ohm
- Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
- Package / Case: DirectFET? Isometric ST
- Input Capacitance (Ciss) (Max) @ Vds: 1360pF @ 10V
- Rds On Max: 5.7 mΩ
- Current - Continuous Drain (Id) @ 25°C: 16A Ta 55A Tc
- Mount: Surface Mount
- Number of Elements: 1
- RoHS Status: Non-RoHS Compliant
- Part Status: Obsolete
- REACH SVHC: No SVHC
- Max Operating Temperature: 150°C
- Number of Pins: 7
- Gate to Source Voltage (Vgs): 20V
- Drain to Source Breakdown Voltage: 20V
- FET Type: N-Channel
- Current Rating: 16A
- Operating Temperature: -40°C~150°C TJ
- Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
- Turn-Off Delay Time: 12 ns
- Continuous Drain Current (ID): 55A
- Width: 3.95mm
- Power Dissipation: 2.1W
- Nominal Vgs: 2.2 V
- Resistance: 5.7mOhm
- Supplier Device Package: DIRECTFET? ST
- Input Capacitance: 1.36nF
- Power Dissipation-Max: 1.4W Ta 42W Tc
- Rds On (Max) @ Id, Vgs: 5.7mOhm @ 15A, 10V
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Infineon — Manufacturer Introduction
Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.
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