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- Manufacturer No：IRLR2905TRPBF
- Manufacturer：Infineon
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IRLR2905TRPBF
- SKU：2728791
- Description：In a Tube of 75, N-Channel MOSFET, 42 A, 55 V, 3-Pin DPAK Infineon IRLR2905PBF
User Guide
User Guide
IRLR2905TRPBF Details
In a Tube of 75, N-Channel MOSFET, 42 A, 55 V, 3-Pin DPAK Infineon IRLR2905PBF
IRLR2905TRPBF Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Number of Channels: 1
- Radiation Hardening: No
- Contact Plating: Tin
- Number of Pins: 3
- Termination: SMD/SMT
- Peak Reflow Temperature (Cel): 260
- Max Junction Temperature (Tj): 175°C
- Element Configuration: Single
- Threshold Voltage: 2V
- Published: 2000
- Technology: MOSFET (Metal Oxide)
- Operating Temperature: -55°C~175°C TJ
- Drain to Source Breakdown Voltage: 55V
- Dual Supply Voltage: 55V
- Case Connection: DRAIN
- Current Rating: 41A
- Fall Time (Typ): 15 ns
- Width: 6.22mm
- Turn On Delay Time: 11 ns
- Recovery Time: 120 ns
- Vgs(th) (Max) @ Id: 2V @ 250μA
- Turn-Off Delay Time: 26 ns
- Resistance: 27mOhm
- Length: 6.7056mm
- Height: 2.52mm
- Current - Continuous Drain (Id) @ 25°C: 42A Tc
- Power Dissipation: 69W
- Gate Charge (Qg) (Max) @ Vgs: 48nC @ 5V
- RoHS Status: ROHS3 Compliant
- Number of Terminations: 2
- Mount: Surface Mount
- Number of Elements: 1
- ECCN Code: EAR99
- JESD-609 Code: e3
- Factory Lead Time: 12 Weeks
- Terminal Form: GULL WING
- REACH SVHC: No SVHC
- Time@Peak Reflow Temperature-Max (s): 30
- Transistor Element Material: SILICON
- Gate to Source Voltage (Vgs): 16V
- Drain Current-Max (Abs) (ID): 20A
- FET Type: N-Channel
- Transistor Application: SWITCHING
- Operating Mode: ENHANCEMENT MODE
- Voltage - Rated DC: 55V
- JESD-30 Code: R-PSSO-G2
- Subcategory: FET General Purpose Power
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Series: HEXFET?
- Additional Feature: AVALANCHE RATED
- Continuous Drain Current (ID): 42A
- JEDEC-95 Code: TO-252AA
- Nominal Vgs: 2 V
- Vgs (Max): ±16V
- Lead Free: Contains Lead, Lead Free
- Drive Voltage (Max Rds On,Min Rds On): 4V 10V
- Power Dissipation-Max: 110W Tc
- Rise Time: 84 ns
- Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 25V
- Rds On (Max) @ Id, Vgs: 27m Ω @ 25A, 10V
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Infineon — Manufacturer Introduction
Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.
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