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  • Manufacturer No:
    IRFI620GPBF
  • Manufacturer:
    Vishay Siliconix
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    Get the PDF file
  • SKU:
    272953
  • Description:
    Single N-Channel 200 V 0.8 Ohms Flange Mount Power Mosfet - TO-220FP
  • Quantity:
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Inventory:740
  • Qty Unit Price price
  • 1 $1.614 $1.614
  • 10 $1.598 $15.98
  • 100 $1.582 $158.2
  • 1000 $1.566 $1566
  • 10000 $1.55 $15500

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  • Manufacturer No:
    IRFI620GPBF
  • Manufacturer:
    Vishay Siliconix
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    IRFI620GPBF
  • SKU:
    272953
  • Description:
    Single N-Channel 200 V 0.8 Ohms Flange Mount Power Mosfet - TO-220FP

IRFI620GPBF Details

Single N-Channel 200 V 0.8 Ohms Flange Mount Power Mosfet - TO-220FP

IRFI620GPBF Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mount: Through Hole
  • Number of Channels: 1
  • Pbfree Code: yes
  • JESD-609 Code: e3
  • Factory Lead Time: 8 Weeks
  • Number of Terminations: 3
  • Pin Count: 3
  • Voltage - Rated DC: 200V
  • Dual Supply Voltage: 200V
  • Transistor Element Material: SILICON
  • Gate to Source Voltage (Vgs): 20V
  • Operating Temperature: -55°C~150°C TJ
  • FET Type: N-Channel
  • Width: 4.83mm
  • Transistor Application: SWITCHING
  • Vgs (Max): ±20V
  • JEDEC-95 Code: TO-220AB
  • Resistance: 800mOhm
  • Recovery Time: 300 ns
  • Height: 9.8mm
  • Package / Case: TO-220-3 Full Pack, Isolated Tab
  • Continuous Drain Current (ID): 4.1A
  • Weight: 6.000006g
  • Turn On Delay Time: 7.2 ns
  • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 25V
  • Rds On (Max) @ Id, Vgs: 800m Ω @ 2.5A, 10V
  • RoHS Status: ROHS3 Compliant
  • Mounting Type: Through Hole
  • Number of Elements: 1
  • ECCN Code: EAR99
  • Radiation Hardening: No
  • Lead Free: Lead Free
  • Packaging: Tube
  • Number of Pins: 3
  • REACH SVHC: No SVHC
  • Drain to Source Breakdown Voltage: 200V
  • Drive Voltage (Max Rds On,Min Rds On): 10V
  • Element Configuration: Single
  • Published: 2004
  • Terminal Finish: MATTE TIN
  • Technology: MOSFET (Metal Oxide)
  • Threshold Voltage: 4V
  • Operating Mode: ENHANCEMENT MODE
  • Power Dissipation: 30W
  • Vgs(th) (Max) @ Id: 4V @ 250μA
  • Isolation Voltage: 2.5kV
  • Fall Time (Typ): 13 ns
  • Rise Time: 22 ns
  • Current Rating: 4.1A
  • Turn-Off Delay Time: 19 ns
  • Nominal Vgs: 4 V
  • Power Dissipation-Max: 30W Tc
  • Length: 10.63mm
  • Current - Continuous Drain (Id) @ 25°C: 4.1A Tc

Excellent

Based on reviews

Excellent

Based on reviews

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