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- Manufacturer No：IRF7910TRPBF
- Manufacturer：Infineon
- Category：Transistors - FETs, MOSFETs - Arrays
- Datasheet：IRF7910TRPBF
- SKU：2729575
- Description：Mosfet Array 2 N-Channel (Dual) 12V 10A 2W Surface Mount 8-SO
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User Guide
IRF7910TRPBF Details
Mosfet Array 2 N-Channel (Dual) 12V 10A 2W Surface Mount 8-SO
IRF7910TRPBF Specification Parameters
- RoHS Status: ROHS3 Compliant
- Number of Elements: 2
- Mount: Surface Mount
- Pbfree Code: yes
- JESD-609 Code: e3
- Contact Plating: Tin
- Number of Terminations: 8
- Terminal Form: GULL WING
- Gate to Source Voltage (Vgs): 12V
- Time@Peak Reflow Temperature-Max (s): 30
- Element Configuration: Single
- Power Dissipation: 2W
- Part Status: Not For New Designs
- Operating Temperature: -55°C~150°C TJ
- Transistor Application: SWITCHING
- Resistance: 15mOhm
- Width: 3.9878mm
- Series: HEXFET?
- Turn-Off Delay Time: 16 ns
- FET Type: 2 N-Channel (Dual)
- Fall Time (Typ): 6.3 ns
- JEDEC-95 Code: MS-012AA
- Gate Charge (Qg) (Max) @ Vgs: 26nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1730pF @ 6V
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Radiation Hardening: No
- Lead Free: Lead Free
- Number of Pins: 8
- Factory Lead Time: 12 Weeks
- Peak Reflow Temperature (Cel): 260
- Drain to Source Breakdown Voltage: 12V
- Transistor Element Material: SILICON
- Max Power Dissipation: 2W
- Continuous Drain Current (ID): 10A
- Published: 2002
- Package / Case: 8-SOIC (0.154, 3.90mm Width)
- Operating Mode: ENHANCEMENT MODE
- FET Technology: METAL-OXIDE SEMICONDUCTOR
- Height: 1.4986mm
- FET Feature: Logic Level Gate
- Rise Time: 22 ns
- Vgs(th) (Max) @ Id: 2V @ 250μA
- Length: 4.9784mm
- Turn On Delay Time: 9.4 ns
- Rds On (Max) @ Id, Vgs: 15m Ω @ 8A, 4.5V
- Base Part Number: IRF7910PBF
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Infineon — Manufacturer Introduction
Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.
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