IRLU3915PBFInfineon
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    • Manufacturer No：
      IRLU3915PBF
    • Manufacturer：
      Infineon
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      IRLU3915PBF
    • SKU：
      2729598
    • Description：
      MOSFET N-CH 55V 30A I-PAK

    User Guide

    User Guide

    IRLU3915PBF Details

    MOSFET N-CH 55V 30A I-PAK

    IRLU3915PBF Specification Parameters

    • RoHS Status: ROHS3 Compliant
    • Mounting Type: Through Hole
    • Number of Elements: 1
    • Radiation Hardening: No
    • Lead Free: Lead Free
    • Packaging: Tube
    • Number of Pins: 3
    • Peak Reflow Temperature (Cel): 260
    • Time@Peak Reflow Temperature-Max (s): 30
    • Published: 2010
    • Element Configuration: Single
    • Part Status: Not For New Designs
    • Technology: MOSFET (Metal Oxide)
    • Transistor Application: SWITCHING
    • Operating Mode: ENHANCEMENT MODE
    • Voltage - Rated DC: 55V
    • Case Connection: DRAIN
    • Fall Time (Typ): 100 ns
    • Height: 6.22mm
    • Power Dissipation: 120W
    • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
    • Pulsed Drain Current-Max (IDM): 240A
    • Width: 2.3876mm
    • Length: 6.7056mm
    • Continuous Drain Current (ID): 61A
    • Turn On Delay Time: 7.4 ns
    • Additional Feature: AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
    • Power Dissipation-Max: 120W Tc
    • Rds On (Max) @ Id, Vgs: 14m Ω @ 30A, 10V
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mount: Through Hole
    • ECCN Code: EAR99
    • JESD-609 Code: e3
    • Factory Lead Time: 12 Weeks
    • Number of Terminations: 3
    • REACH SVHC: No SVHC
    • Terminal Finish: Matte Tin (Sn) - with Nickel (Ni) barrier
    • Threshold Voltage: 3V
    • Transistor Element Material: SILICON
    • Gate to Source Voltage (Vgs): 16V
    • FET Type: N-Channel
    • Current Rating: 30A
    • Operating Temperature: -55°C~175°C TJ
    • Drain to Source Breakdown Voltage: 55V
    • Dual Supply Voltage: 55V
    • Subcategory: FET General Purpose Power
    • Series: HEXFET?
    • Vgs(th) (Max) @ Id: 3V @ 250μA
    • Nominal Vgs: 3 V
    • Vgs (Max): ±16V
    • Resistance: 14mOhm
    • Drive Voltage (Max Rds On,Min Rds On): 5V 10V
    • Current - Continuous Drain (Id) @ 25°C: 30A Tc
    • Rise Time: 51 ns
    • Avalanche Energy Rating (Eas): 200 mJ
    • Turn-Off Delay Time: 83 ns
    • Gate Charge (Qg) (Max) @ Vgs: 92nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 1870pF @ 25V
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    Infineon — Manufacturer Introduction

    Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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