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- Manufacturer No：IRLR2905ZTRPBF
- Manufacturer：Infineon
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IRLR2905ZTRPBF
- SKU：2735526
- Description：In a Tube of 75, N-Channel MOSFET, 60 A, 55 V, 3-Pin DPAK Infineon IRLR2905ZPBF
User Guide
User Guide
IRLR2905ZTRPBF Details
In a Tube of 75, N-Channel MOSFET, 60 A, 55 V, 3-Pin DPAK Infineon IRLR2905ZPBF
IRLR2905ZTRPBF Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- ECCN Code: EAR99
- JESD-609 Code: e3
- Number of Pins: 3
- Termination: SMD/SMT
- Peak Reflow Temperature (Cel): 260
- Time@Peak Reflow Temperature-Max (s): 30
- Published: 2010
- Element Configuration: Single
- FET Type: N-Channel
- Transistor Application: SWITCHING
- Operating Mode: ENHANCEMENT MODE
- Voltage - Rated DC: 55V
- JESD-30 Code: R-PSSO-G2
- Subcategory: FET General Purpose Power
- Current Rating: 60A
- Series: HEXFET?
- Width: 6.22mm
- Turn On Delay Time: 14 ns
- JEDEC-95 Code: TO-252AA
- Turn-Off Delay Time: 24 ns
- Fall Time (Typ): 33 ns
- Pulsed Drain Current-Max (IDM): 240A
- Rise Time: 130 ns
- Length: 6.7056mm
- Current - Continuous Drain (Id) @ 25°C: 42A Tc
- Avalanche Energy Rating (Eas): 85 mJ
- Additional Feature: AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE
- Input Capacitance (Ciss) (Max) @ Vds: 1570pF @ 25V
- RoHS Status: ROHS3 Compliant
- Number of Terminations: 2
- Mount: Surface Mount
- Number of Elements: 1
- Radiation Hardening: No
- Factory Lead Time: 12 Weeks
- Terminal Form: GULL WING
- REACH SVHC: No SVHC
- Terminal Finish: Matte Tin (Sn) - with Nickel (Ni) barrier
- Threshold Voltage: 3V
- Transistor Element Material: SILICON
- Gate to Source Voltage (Vgs): 16V
- Technology: MOSFET (Metal Oxide)
- Operating Temperature: -55°C~175°C TJ
- Drain to Source Breakdown Voltage: 55V
- Dual Supply Voltage: 55V
- Case Connection: DRAIN
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
- Continuous Drain Current (ID): 42mA
- Vgs(th) (Max) @ Id: 3V @ 250μA
- Drain Current-Max (Abs) (ID): 42A
- Nominal Vgs: 3 V
- Vgs (Max): ±16V
- Recovery Time: 33 ns
- Power Dissipation: 110W
- Lead Free: Contains Lead, Lead Free
- Power Dissipation-Max: 110W Tc
- Resistance: 13.5mOhm
- Gate Charge (Qg) (Max) @ Vgs: 35nC @ 5V
- Height: 2.2606mm
- Rds On (Max) @ Id, Vgs: 13.5m Ω @ 36A, 10V
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Infineon — Manufacturer Introduction
Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.
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