SI1905DL-T1-E3Vishay Siliconix
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    • Manufacturer No：
      SI1905DL-T1-E3
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Arrays
    • Datasheet：
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    • SKU：
      274065
    • Description：
      MOSFET 2P-CH 8V 0.57A SC70-6
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    • Manufacturer No：
      SI1905DL-T1-E3
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Arrays
    • Datasheet：
      SI1905DL-T1-E3
    • SKU：
      274065
    • Description：
      MOSFET 2P-CH 8V 0.57A SC70-6

    User Guide

    User Guide

    SI1905DL-T1-E3 Details

    MOSFET 2P-CH 8V 0.57A SC70-6

    SI1905DL-T1-E3 Specification Parameters

    • RoHS Status: ROHS3 Compliant
    • Number of Elements: 2
    • Mount: Surface Mount
    • ECCN Code: EAR99
    • Radiation Hardening: No
    • Lead Free: Lead Free
    • Number of Terminations: 6
    • Pin Count: 6
    • Peak Reflow Temperature (Cel): 260
    • Element Configuration: Dual
    • Transistor Element Material: SILICON
    • Terminal Finish: MATTE TIN
    • Gate to Source Voltage (Vgs): 8V
    • Turn-Off Delay Time: 10 ns
    • Fall Time (Typ): 25 ns
    • Turn On Delay Time: 6 ns
    • Rise Time: 25ns
    • Series: TrenchFET?
    • FET Type: 2 P-Channel (Dual)
    • Power Dissipation: 270mW
    • Vgs(th) (Max) @ Id: 450mV @ 250μA (Min)
    • Nominal Vgs: -450 mV
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mounting Type: Surface Mount
    • Packaging: Tape & Reel (TR)
    • Pbfree Code: yes
    • JESD-609 Code: e3
    • Part Status: Obsolete
    • Number of Pins: 6
    • Terminal Form: GULL WING
    • Time@Peak Reflow Temperature-Max (s): 20
    • REACH SVHC: Unknown
    • Operating Temperature: -55°C~150°C TJ
    • Operating Mode: ENHANCEMENT MODE
    • Drain to Source Breakdown Voltage: 8V
    • FET Technology: METAL-OXIDE SEMICONDUCTOR
    • Package / Case: 6-TSSOP, SC-88, SOT-363
    • Resistance: 600mOhm
    • FET Feature: Logic Level Gate
    • Continuous Drain Current (ID): 570mA
    • Max Power Dissipation: 270mW
    • Drain Current-Max (Abs) (ID): 0.57A
    • Gate Charge (Qg) (Max) @ Vgs: 2.3nC @ 4.5V
    • Base Part Number: SI1905
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