Add to like
Add to project list
- Home >
- Manufacturer No：
- Manufacturer：
- Category：
- Datasheet：
- SKU：
- Description：
- Quantity：
- RFQ
Add To Cart
- Material flow:
- Payment:
Inventory:3708
- Qty Unit Price price
- 1 $359.011 $359.011
- 10 $355.456 $3554.56
- 100 $351.936 $35193.6
- 1000 $348.451 $348451
- 10000 $345 $3450000
Not the price you want? Send RFQ Now and we'll contact you ASAP
- Manufacturer No：SI7135DP-T1-GE3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：SI7135DP-T1-GE3
- SKU：276223
- Description：Trans MOSFET P-CH 30V 31.6A 8-Pin PowerPAK SO T/R
User Guide
User Guide
SI7135DP-T1-GE3 Details
Trans MOSFET P-CH 30V 31.6A 8-Pin PowerPAK SO T/R
SI7135DP-T1-GE3 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Elements: 1
- ECCN Code: EAR99
- Radiation Hardening: No
- Lead Free: Lead Free
- Pin Count: 8
- Published: 2013
- Peak Reflow Temperature (Cel): 260
- Terminal Finish: Matte Tin (Sn)
- Max Junction Temperature (Tj): 150°C
- Transistor Element Material: SILICON
- Drain to Source Voltage (Vdss): 30V
- Length: 4.9mm
- Transistor Application: SWITCHING
- Vgs (Max): ±20V
- Subcategory: Other Transistors
- Case Connection: DRAIN
- Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
- FET Type: P-Channel
- Rise Time: 100ns
- Series: TrenchFET?
- Turn-Off Delay Time: 110 ns
- Package / Case: PowerPAK? SO-8
- Resistance: 3.9MOhm
- Width: 5.89mm
- JESD-30 Code: R-XDSO-C5
- Nominal Vgs: -3 V
- Rds On (Max) @ Id, Vgs: 3.9m Ω @ 20A, 10V
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Number of Channels: 1
- Pbfree Code: yes
- JESD-609 Code: e3
- Number of Pins: 8
- Terminal Position: DUAL
- REACH SVHC: No SVHC
- Number of Terminations: 5
- Time@Peak Reflow Temperature-Max (s): 30
- Factory Lead Time: 14 Weeks
- Gate to Source Voltage (Vgs): 20V
- Operating Temperature: -55°C~150°C TJ
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- Terminal Form: C BEND
- Configuration: SINGLE WITH BUILT-IN DIODE
- Fall Time (Typ): 50 ns
- Turn On Delay Time: 25 ns
- Vgs(th) (Max) @ Id: 3V @ 250μA
- Height: 1.12mm
- Drain to Source Breakdown Voltage: -30V
- Threshold Voltage: -3V
- Weight: 506.605978mg
- Current - Continuous Drain (Id) @ 25°C: 60A Tc
- Power Dissipation: 6.25W
- Gate Charge (Qg) (Max) @ Vgs: 250nC @ 10V
- Power Dissipation-Max: 6.25W Ta 104W Tc
- Continuous Drain Current (ID): -60A
Search for similar products
SI7135DP-T1-GE3 Similar Products
The four parts on the right have similar specifications to Vishay Siliconix & SI7135DP-T1-GE3
Hot Search
Excellent
Based on reviews
Excellent
Based on reviews
LKR uses cookies to help deliver a better online experience. You can see what cookies we server and how to set your preferences in our
Cookies Policy, if you agree on our use of cookies please click continue. When browsing and using our website, LKR also collects, stores and/or processes personal data,
please read our Term & Condition
and
Privacy Policy
to find out more.
About Us
Our social media
We support logistics
We Accept Payment Via
