SI1900DL-T1-E3Vishay Siliconix
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    • Manufacturer No：
      SI1900DL-T1-E3
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Arrays
    • Datasheet：
      Get the PDF file
    • SKU：
      276970
    • Description：
      Trans MOSFET N-CH 30V 0.59A 6-Pin SC-70 T/R
    • Quantity：
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    Inventory:28730
    • Qty Unit Price price
    • 1 $96.779 $96.779
    • 10 $95.82 $958.2
    • 100 $94.871 $9487.1
    • 1000 $93.931 $93931
    • 10000 $93 $930000

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    • Manufacturer No：
      SI1900DL-T1-E3
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Arrays
    • Datasheet：
      SI1900DL-T1-E3
    • SKU：
      276970
    • Description：
      Trans MOSFET N-CH 30V 0.59A 6-Pin SC-70 T/R

    User Guide

    User Guide

    SI1900DL-T1-E3 Details

    Trans MOSFET N-CH 30V 0.59A 6-Pin SC-70 T/R

    SI1900DL-T1-E3 Specification Parameters

    • Part Status: Active
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Number of Channels: 2
    • Mount: Surface Mount
    • ECCN Code: EAR99
    • JESD-609 Code: e3
    • Qualification Status: Not Qualified
    • Number of Pins: 6
    • Terminal Form: GULL WING
    • Terminal Finish: Matte Tin (Sn)
    • Factory Lead Time: 14 Weeks
    • Element Configuration: Dual
    • REACH SVHC: Unknown
    • Height: 1mm
    • Drain to Source Breakdown Voltage: 30V
    • Operating Temperature: -55°C~150°C TJ
    • Subcategory: FET General Purpose Power
    • Fall Time (Typ): 8 ns
    • Rise Time: 8 ns
    • Package / Case: 6-TSSOP, SC-88, SOT-363
    • FET Feature: Logic Level Gate
    • FET Type: 2 N-Channel (Dual)
    • Continuous Drain Current (ID): 630mA
    • Max Power Dissipation: 270mW
    • Resistance: 480mOhm
    • Weight: 7.512624mg
    • Rds On (Max) @ Id, Vgs: 480m Ω @ 590mA, 10V
    • RoHS Status: ROHS3 Compliant
    • Number of Elements: 2
    • Mounting Type: Surface Mount
    • Packaging: Tape & Reel (TR)
    • Pbfree Code: yes
    • Lead Free: Lead Free
    • Number of Terminations: 6
    • Pin Count: 6
    • Peak Reflow Temperature (Cel): 260
    • Time@Peak Reflow Temperature-Max (s): 40
    • Length: 2mm
    • Published: 2007
    • Transistor Element Material: SILICON
    • Gate to Source Voltage (Vgs): 20V
    • Width: 1.25mm
    • Operating Mode: ENHANCEMENT MODE
    • FET Technology: METAL-OXIDE SEMICONDUCTOR
    • Turn-Off Delay Time: 8 ns
    • Turn On Delay Time: 5 ns
    • Vgs(th) (Max) @ Id: 3V @ 250μA
    • Series: TrenchFET?
    • Nominal Vgs: 3 V
    • Current - Continuous Drain (Id) @ 25°C: 590mA
    • Power Dissipation: 270mW
    • Drain Current-Max (Abs) (ID): 0.59A
    • Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
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