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- Manufacturer No：IRFPF30
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IRFPF30
- SKU：278980
- Description：MOSFET N-CH 900V 3.6A TO-247AC
User Guide
User Guide
IRFPF30 Details
MOSFET N-CH 900V 3.6A TO-247AC
IRFPF30 Specification Parameters
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- RoHS Status: Non-RoHS Compliant
- Part Status: Obsolete
- Number of Pins: 3
- Max Operating Temperature: 150°C
- Element Configuration: Single
- Published: 2017
- FET Type: N-Channel
- Vgs (Max): ±20V
- Fall Time (Typ): 30 ns
- Supplier Device Package: TO-247-3
- Drain to Source Voltage (Vdss): 900V
- Rise Time: 25ns
- Current Rating: 3.6A
- Turn On Delay Time: 14 ns
- Input Capacitance: 1.2nF
- Width: 5.31mm
- Weight: 38.000013g
- Drain to Source Resistance: 3.7Ohm
- Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V
- Rds On Max: 3.7 Ω
- Mounting Type: Through Hole
- Number of Channels: 1
- Min Operating Temperature: -55°C
- Packaging: Tube
- Lead Free: Contains Lead
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Gate to Source Voltage (Vgs): 20V
- Operating Temperature: -55°C~150°C TJ
- Technology: MOSFET (Metal Oxide)
- Vgs(th) (Max) @ Id: 4V @ 250μA
- Package / Case: TO-247-3
- Voltage - Rated DC: 900V
- Drain to Source Breakdown Voltage: 900V
- Length: 15.87mm
- Continuous Drain Current (ID): 3.6A
- Turn-Off Delay Time: 90 ns
- Power Dissipation: 125W
- Height: 20.7mm
- Power Dissipation-Max: 125W Tc
- Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V
- Current - Continuous Drain (Id) @ 25°C: 3.6A Tc
- Rds On (Max) @ Id, Vgs: 3.7Ohm @ 2.2A, 10V
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