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  • Manufacturer No:
    SI9945BDY-T1-GE3
  • Manufacturer:
    Vishay Siliconix
  • Category:
    Transistors - FETs, MOSFETs - Arrays
  • Datasheet:
    Get the PDF file
  • SKU:
    279417
  • Description:
    MOSFET 60V 5.3A 3.1W 58mohm @ 10V
  • Quantity:
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Inventory:46922
  • Qty Unit Price price
  • 1 $0.813 $0.813
  • 10 $0.804 $8.04
  • 100 $0.796 $79.6
  • 1000 $0.788 $788
  • 10000 $0.78 $7800

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  • Manufacturer No:
    SI9945BDY-T1-GE3
  • Manufacturer:
    Vishay Siliconix
  • Category:
    Transistors - FETs, MOSFETs - Arrays
  • Datasheet:
    SI9945BDY-T1-GE3
  • SKU:
    279417
  • Description:
    MOSFET 60V 5.3A 3.1W 58mohm @ 10V

SI9945BDY-T1-GE3 Details

MOSFET 60V 5.3A 3.1W 58mohm @ 10V

SI9945BDY-T1-GE3 Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Number of Channels: 2
  • Mount: Surface Mount
  • ECCN Code: EAR99
  • Radiation Hardening: No
  • Lead Free: Lead Free
  • Number of Terminations: 8
  • Terminal Form: GULL WING
  • Peak Reflow Temperature (Cel): 260
  • Terminal Finish: Matte Tin (Sn)
  • Time@Peak Reflow Temperature-Max (s): 30
  • Factory Lead Time: 14 Weeks
  • Transistor Element Material: SILICON
  • Gate to Source Voltage (Vgs): 20V
  • Operating Temperature: -55°C~150°C TJ
  • Package / Case: 8-SOIC (0.154, 3.90mm Width)
  • Transistor Application: SWITCHING
  • Turn On Delay Time: 10 ns
  • FET Technology: METAL-OXIDE SEMICONDUCTOR
  • Turn-Off Delay Time: 20 ns
  • FET Feature: Logic Level Gate
  • Series: TrenchFET?
  • Drain Current-Max (Abs) (ID): 5.3A
  • Subcategory: FET General Purpose Powers
  • Power Dissipation: 3.1W
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
  • Resistance: 58mOhm
  • Rds On (Max) @ Id, Vgs: 58m Ω @ 4.3A, 10V
  • RoHS Status: ROHS3 Compliant
  • Number of Elements: 2
  • Mounting Type: Surface Mount
  • Packaging: Tape & Reel (TR)
  • Pbfree Code: yes
  • JESD-609 Code: e3
  • Number of Pins: 8
  • Pin Count: 8
  • REACH SVHC: No SVHC
  • Drain to Source Breakdown Voltage: 60V
  • Published: 2011
  • Max Junction Temperature (Tj): 150°C
  • Element Configuration: Dual
  • Length: 5mm
  • Width: 4mm
  • Threshold Voltage: 1V
  • Height: 1.75mm
  • Operating Mode: ENHANCEMENT MODE
  • Fall Time (Typ): 10 ns
  • Rise Time: 15 ns
  • Vgs(th) (Max) @ Id: 3V @ 250μA
  • Continuous Drain Current (ID): 4.3A
  • FET Type: 2 N-Channel (Dual)
  • Current - Continuous Drain (Id) @ 25°C: 5.3A
  • Nominal Vgs: 2.5 V
  • Max Power Dissipation: 3.1W
  • Weight: 186.993455mg
  • Input Capacitance (Ciss) (Max) @ Vds: 665pF @ 15V
  • Base Part Number: SI9945

Excellent

Based on reviews

Excellent

Based on reviews

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