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- Manufacturer No：SIA416DJ-T1-GE3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：SIA416DJ-T1-GE3
- SKU：281663
- Description：MOSFET N-CH 100V 11.3A SC70-6L
User Guide
User Guide
SIA416DJ-T1-GE3 Details
MOSFET N-CH 100V 11.3A SC70-6L
SIA416DJ-T1-GE3 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Channels: 1
- Pbfree Code: yes
- Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
- Terminal Position: DUAL
- Published: 2013
- Drain to Source Breakdown Voltage: 100V
- REACH SVHC: Unknown
- Element Configuration: Single
- Terminal Form: NO LEAD
- FET Type: N-Channel
- Transistor Application: SWITCHING
- Vgs (Max): ±20V
- Threshold Voltage: 1.6V
- Turn On Delay Time: 25 ns
- Height: 750μm
- Rise Time: 100 ns
- Length: 2.05mm
- Vgs(th) (Max) @ Id: 3V @ 250μA
- Continuous Drain Current (ID): 11.3A
- JESD-30 Code: S-PDSO-N3
- Package / Case: PowerPAK? SC-70-6
- Current - Continuous Drain (Id) @ 25°C: 11.3A Tc
- Input Capacitance (Ciss) (Max) @ Vds: 295pF @ 50V
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Number of Elements: 1
- ECCN Code: EAR99
- Lead Free: Lead Free
- Peak Reflow Temperature (Cel): NOT SPECIFIED
- Number of Terminations: 3
- Number of Pins: 6
- Factory Lead Time: 14 Weeks
- Transistor Element Material: SILICON
- Gate to Source Voltage (Vgs): 20V
- Operating Temperature: -55°C~150°C TJ
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- Case Connection: DRAIN
- Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
- Turn-Off Delay Time: 15 ns
- Packaging: Digi-Reel?
- Power Dissipation: 3.5W
- Width: 2.05mm
- Series: TrenchFET?
- Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
- Resistance: 83mOhm
- Power Dissipation-Max: 3.5W Ta 19W Tc
- Avalanche Energy Rating (Eas): 0.45 mJ
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