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- Manufacturer No：IRFPF40
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IRFPF40
- SKU：282093
- Description：Tube Through Hole N-Channel Single Mosfet Transistor 4.7A Tc 4.7A 150W Tc 32ns
User Guide
User Guide
IRFPF40 Details
Tube Through Hole N-Channel Single Mosfet Transistor 4.7A Tc 4.7A 150W Tc 32ns
IRFPF40 Specification Parameters
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- RoHS Status: Non-RoHS Compliant
- Part Status: Obsolete
- Number of Pins: 3
- Max Operating Temperature: 150°C
- Element Configuration: Single
- Published: 2017
- FET Type: N-Channel
- Vgs (Max): ±20V
- Vgs(th) (Max) @ Id: 4V @ 250μA
- Package / Case: TO-247-3
- Voltage - Rated DC: 900V
- Drain to Source Breakdown Voltage: 900V
- Fall Time (Typ): 32 ns
- Current Rating: 4.7A
- Width: 5.31mm
- Input Capacitance: 1.6nF
- Power Dissipation-Max: 150W Tc
- Rise Time: 36ns
- Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 25V
- Rds On (Max) @ Id, Vgs: 2.5Ohm @ 2.8A, 10V
- Mounting Type: Through Hole
- Number of Channels: 1
- Min Operating Temperature: -55°C
- Packaging: Tube
- Lead Free: Contains Lead
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Gate to Source Voltage (Vgs): 20V
- Operating Temperature: -55°C~150°C TJ
- Technology: MOSFET (Metal Oxide)
- Turn On Delay Time: 15 ns
- Drain to Source Resistance: 2.5Ohm
- Supplier Device Package: TO-247-3
- Drain to Source Voltage (Vdss): 900V
- Length: 15.87mm
- Turn-Off Delay Time: 110 ns
- Continuous Drain Current (ID): 4.7A
- Height: 20.7mm
- Weight: 38.000013g
- Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
- Rds On Max: 2.5 Ω
- Current - Continuous Drain (Id) @ 25°C: 4.7A Tc
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