SI2316BDS-T1-E3Vishay Siliconix
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    • Manufacturer No：
      SI2316BDS-T1-E3
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      Get the PDF file
    • SKU：
      282419
    • Description：
      Trans MOSFET N-CH 30V 3.9A 3-Pin TO-236 T/R
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    Inventory:8270
    • Qty Unit Price price
    • 1 $828.324 $828.324
    • 10 $820.122 $8201.22
    • 100 $812.001 $81200.1
    • 1000 $803.961 $803961
    • 10000 $796 $7960000

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    • Manufacturer No：
      SI2316BDS-T1-E3
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      SI2316BDS-T1-E3
    • SKU：
      282419
    • Description：
      Trans MOSFET N-CH 30V 3.9A 3-Pin TO-236 T/R

    User Guide

    User Guide

    SI2316BDS-T1-E3 Details

    Trans MOSFET N-CH 30V 3.9A 3-Pin TO-236 T/R

    SI2316BDS-T1-E3 Specification Parameters

    • Part Status: Active
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mount: Surface Mount
    • Number of Elements: 1
    • ECCN Code: EAR99
    • Radiation Hardening: No
    • Lead Free: Lead Free
    • Number of Terminations: 3
    • Pin Count: 3
    • Peak Reflow Temperature (Cel): 260
    • Time@Peak Reflow Temperature-Max (s): 30
    • Published: 2008
    • Element Configuration: Single
    • Drain to Source Breakdown Voltage: 30V
    • FET Type: N-Channel
    • Width: 1.4mm
    • Operating Mode: ENHANCEMENT MODE
    • Vgs (Max): ±20V
    • Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
    • Resistance: 50mOhm
    • Height: 1.02mm
    • Vgs(th) (Max) @ Id: 3V @ 250μA
    • Series: TrenchFET?
    • Rise Time: 65 ns
    • Subcategory: FET General Purpose Powers
    • Current - Continuous Drain (Id) @ 25°C: 4.5A Tc
    • Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 10V
    • Rds On (Max) @ Id, Vgs: 50m Ω @ 3.9A, 10V
    • RoHS Status: ROHS3 Compliant
    • Mounting Type: Surface Mount
    • Packaging: Tape & Reel (TR)
    • Number of Channels: 1
    • Pbfree Code: yes
    • JESD-609 Code: e3
    • Terminal Position: DUAL
    • Number of Pins: 3
    • Terminal Form: GULL WING
    • Terminal Finish: Matte Tin (Sn)
    • Factory Lead Time: 14 Weeks
    • Transistor Element Material: SILICON
    • Gate to Source Voltage (Vgs): 20V
    • Operating Temperature: -55°C~150°C TJ
    • Technology: MOSFET (Metal Oxide)
    • Transistor Application: SWITCHING
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Drain Current-Max (Abs) (ID): 4.5A
    • Turn On Delay Time: 20 ns
    • Power Dissipation: 1.25W
    • Continuous Drain Current (ID): 3.9A
    • Turn-Off Delay Time: 11 ns
    • Fall Time (Typ): 65 ns
    • Length: 3.04mm
    • Weight: 1.437803g
    • Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 15V
    • Power Dissipation-Max: 1.25W Ta 1.66W Tc
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