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  • Manufacturer No:
    SI3459BDV-T1-GE3
  • Manufacturer:
    Vishay Siliconix
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    Get the PDF file
  • SKU:
    283060
  • Description:
    MOSFET P-CH 60V 2.9A 6-TSOP
  • Quantity:
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Inventory:40688
  • Qty Unit Price price
  • 1 $0.836 $0.836
  • 10 $0.827 $8.27
  • 100 $0.818 $81.8
  • 1000 $0.809 $809
  • 10000 $0.8 $8000

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  • Manufacturer No:
    SI3459BDV-T1-GE3
  • Manufacturer:
    Vishay Siliconix
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    SI3459BDV-T1-GE3
  • SKU:
    283060
  • Description:
    MOSFET P-CH 60V 2.9A 6-TSOP

SI3459BDV-T1-GE3 Details

MOSFET P-CH 60V 2.9A 6-TSOP

SI3459BDV-T1-GE3 Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mount: Surface Mount
  • Number of Elements: 1
  • ECCN Code: EAR99
  • Radiation Hardening: No
  • Lead Free: Lead Free
  • Number of Terminations: 6
  • Pin Count: 6
  • Peak Reflow Temperature (Cel): 260
  • Time@Peak Reflow Temperature-Max (s): 30
  • REACH SVHC: Unknown
  • Element Configuration: Single
  • Height: 1mm
  • Operating Temperature: -55°C~150°C TJ
  • Transistor Application: SWITCHING
  • Vgs (Max): ±20V
  • Width: 1.65mm
  • Fall Time (Typ): 10 ns
  • FET Type: P-Channel
  • Turn On Delay Time: 5 ns
  • Vgs(th) (Max) @ Id: 3V @ 250μA
  • Series: TrenchFET?
  • Feedback Cap-Max (Crss): 30 pF
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
  • Resistance: 216mOhm
  • Continuous Drain Current (ID): -2.2A
  • Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 30V
  • Power Dissipation-Max: 2W Ta 3.3W Tc
  • RoHS Status: ROHS3 Compliant
  • Mounting Type: Surface Mount
  • Packaging: Tape & Reel (TR)
  • Number of Channels: 1
  • Pbfree Code: yes
  • JESD-609 Code: e3
  • Terminal Position: DUAL
  • Number of Pins: 6
  • Terminal Form: GULL WING
  • Drain to Source Voltage (Vdss): 60V
  • Factory Lead Time: 14 Weeks
  • Transistor Element Material: SILICON
  • Power Dissipation: 2W
  • Gate to Source Voltage (Vgs): 20V
  • Technology: MOSFET (Metal Oxide)
  • Operating Mode: ENHANCEMENT MODE
  • Subcategory: Other Transistors
  • Length: 3.05mm
  • Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
  • Rise Time: 12 ns
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Turn-Off Delay Time: 18 ns
  • Threshold Voltage: -3V
  • Terminal Finish: PURE MATTE TIN
  • Weight: 19.986414mg
  • Nominal Vgs: -3 V
  • Drain Current-Max (Abs) (ID): 0.0022A
  • Current - Continuous Drain (Id) @ 25°C: 2.9A Tc
  • Rds On (Max) @ Id, Vgs: 216m Ω @ 2.2A, 10V

Excellent

Based on reviews

Excellent

Based on reviews

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