SI4160DY-T1-GE3Vishay Siliconix
    Add to like
    Add to project list
    • Manufacturer No：
      SI4160DY-T1-GE3
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      Get the PDF file
    • SKU：
      284267
    • Description：
      MOSFET N-CH 30V 25.4A 8-SOIC
    • Quantity：
        • RFQ
        • Add To Cart
    • Material flow:
    • Payment:
    Inventory:0
    • Qty Unit Price price
    • 1 $1889.74 $1889.74
    • 10 $1871.029 $18710.29
    • 100 $1852.503 $185250.3
    • 1000 $1834.161 $1834161
    • 10000 $1816 $18160000

    Not the price you want? Send RFQ Now and we'll contact you ASAP

    • Manufacturer No：
      SI4160DY-T1-GE3
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      SI4160DY-T1-GE3
    • SKU：
      284267
    • Description：
      MOSFET N-CH 30V 25.4A 8-SOIC

    User Guide

    User Guide

    SI4160DY-T1-GE3 Details

    MOSFET N-CH 30V 25.4A 8-SOIC

    SI4160DY-T1-GE3 Specification Parameters

    • Part Status: Active
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mount: Surface Mount
    • Number of Elements: 1
    • ECCN Code: EAR99
    • JESD-609 Code: e3
    • Number of Pins: 8
    • Pin Count: 8
    • Published: 2013
    • Peak Reflow Temperature (Cel): 260
    • Factory Lead Time: 14 Weeks
    • Transistor Element Material: SILICON
    • Gate to Source Voltage (Vgs): 20V
    • Width: 4mm
    • Package / Case: 8-SOIC (0.154, 3.90mm Width)
    • Technology: MOSFET (Metal Oxide)
    • Operating Mode: ENHANCEMENT MODE
    • Vgs (Max): ±20V
    • Power Dissipation: 2.5W
    • Turn On Delay Time: 25 ns
    • Rise Time: 16 ns
    • Turn-Off Delay Time: 28 ns
    • Vgs(th) (Max) @ Id: 2.4V @ 250μA
    • Continuous Drain Current (ID): 25.4A
    • Drain-source On Resistance-Max: 0.0049Ohm
    • Input Capacitance (Ciss) (Max) @ Vds: 2071pF @ 15V
    • RoHS Status: ROHS3 Compliant
    • Mounting Type: Surface Mount
    • Packaging: Tape & Reel (TR)
    • Number of Channels: 1
    • Radiation Hardening: No
    • Contact Plating: Tin
    • Number of Terminations: 8
    • Terminal Position: DUAL
    • Terminal Form: GULL WING
    • Time@Peak Reflow Temperature-Max (s): 40
    • REACH SVHC: Unknown
    • Length: 5mm
    • Drain to Source Breakdown Voltage: 30V
    • Operating Temperature: -55°C~150°C TJ
    • FET Type: N-Channel
    • Transistor Application: SWITCHING
    • Height: 1.5mm
    • Configuration: SINGLE WITH BUILT-IN DIODE
    • Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
    • Fall Time (Typ): 12 ns
    • Series: TrenchFET?
    • Nominal Vgs: 1 V
    • Weight: 186.993455mg
    • Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V
    • Power Dissipation-Max: 2.5W Ta 5.7W Tc
    • Current - Continuous Drain (Id) @ 25°C: 25.4A Tc
    Search for similar products

    SI4160DY-T1-GE3 Similar Products

    The four parts on the right have similar specifications to Vishay Siliconix & SI4160DY-T1-GE3

    Hot Search

    Excellent

    Based on reviews

    Excellent

    Based on reviews

    LKR uses cookies to help deliver a better online experience. You can see what cookies we server and how to set your preferences in our Cookies Policy, if you agree on our use of cookies please click continue. When browsing and using our website, LKR also collects, stores and/or processes personal data, please read our Term & Condition and Privacy Policy to find out more.

    About Us

    Support

    Quick Links

    Contact Us

    Our social media
    We support logistics
    We Accept Payment Via