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- Manufacturer No：SI7686DP-T1-E3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：SI7686DP-T1-E3
- SKU：297924
- Description：MOSFET N-CH 30V 35A PPAK SO-8
User Guide
User Guide
SI7686DP-T1-E3 Details
MOSFET N-CH 30V 35A PPAK SO-8
SI7686DP-T1-E3 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Elements: 1
- ECCN Code: EAR99
- Radiation Hardening: No
- Lead Free: Lead Free
- Pin Count: 8
- Peak Reflow Temperature (Cel): 260
- Terminal Finish: Matte Tin (Sn)
- Factory Lead Time: 14 Weeks
- Transistor Element Material: SILICON
- Gate to Source Voltage (Vgs): 20V
- DS Breakdown Voltage-Min: 30V
- Operating Temperature: -55°C~150°C TJ
- Length: 4.9mm
- Transistor Application: SWITCHING
- Vgs (Max): ±20V
- Terminal Form: C BEND
- Subcategory: FET General Purpose Power
- Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
- Turn On Delay Time: 13 ns
- Rise Time: 16 ns
- Turn-Off Delay Time: 23 ns
- Package / Case: PowerPAK? SO-8
- Current - Continuous Drain (Id) @ 25°C: 35A Tc
- Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
- Resistance: 9.5mOhm
- Input Capacitance (Ciss) (Max) @ Vds: 1220pF @ 15V
- Power Dissipation-Max: 5W Ta 37.9W Tc
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Number of Channels: 1
- Pbfree Code: yes
- JESD-609 Code: e3
- Number of Pins: 8
- Terminal Position: DUAL
- Number of Terminations: 5
- Time@Peak Reflow Temperature-Max (s): 30
- Published: 2014
- Element Configuration: Single
- Drain to Source Voltage (Vdss): 30V
- Power Dissipation: 5W
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- Pulsed Drain Current-Max (IDM): 50A
- Case Connection: DRAIN
- Continuous Drain Current (ID): 35A
- Fall Time (Typ): 8 ns
- Vgs(th) (Max) @ Id: 3V @ 250μA
- Series: TrenchFET?
- Height: 1.04mm
- Weight: 506.605978mg
- Width: 5.89mm
- JESD-30 Code: R-XDSO-C5
- Avalanche Energy Rating (Eas): 5 mJ
- Rds On (Max) @ Id, Vgs: 9.5m Ω @ 13.8A, 10V
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