SI4778DY-T1-GE3Vishay Siliconix
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    • Manufacturer No：
      SI4778DY-T1-GE3
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
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    • SKU：
      298511
    • Description：
      MOSFET N-CH 25V 8A 8-SOIC
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    • Manufacturer No：
      SI4778DY-T1-GE3
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      SI4778DY-T1-GE3
    • SKU：
      298511
    • Description：
      MOSFET N-CH 25V 8A 8-SOIC

    User Guide

    User Guide

    SI4778DY-T1-GE3 Details

    MOSFET N-CH 25V 8A 8-SOIC

    SI4778DY-T1-GE3 Specification Parameters

    • RoHS Status: ROHS3 Compliant
    • Mounting Type: Surface Mount
    • Packaging: Tape & Reel (TR)
    • Number of Channels: 1
    • Radiation Hardening: No
    • Part Status: Obsolete
    • Number of Terminations: 8
    • Terminal Position: DUAL
    • Terminal Form: GULL WING
    • Time@Peak Reflow Temperature-Max (s): 30
    • Transistor Element Material: SILICON
    • Factory Lead Time: 15 Weeks
    • Operating Temperature: -55°C~150°C TJ
    • Drain Current-Max (Abs) (ID): 8A
    • FET Type: N-Channel
    • Transistor Application: SWITCHING
    • Fall Time (Typ): 10 ns
    • Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
    • Turn-Off Delay Time: 20 ns
    • Vgs (Max): ±16V
    • Terminal Finish: PURE MATTE TIN
    • Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
    • Drain-source On Resistance-Max: 0.023Ohm
    • Power Dissipation-Max: 2.4W Ta 5W Tc
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mount: Surface Mount
    • Number of Elements: 1
    • ECCN Code: EAR99
    • JESD-609 Code: e3
    • Number of Pins: 8
    • Pin Count: 8
    • Published: 2013
    • Peak Reflow Temperature (Cel): 260
    • Drain to Source Breakdown Voltage: 25V
    • Element Configuration: Single
    • Gate to Source Voltage (Vgs): 16V
    • Package / Case: 8-SOIC (0.154, 3.90mm Width)
    • Continuous Drain Current (ID): 8A
    • Technology: MOSFET (Metal Oxide)
    • Operating Mode: ENHANCEMENT MODE
    • Rise Time: 50 ns
    • Turn On Delay Time: 15 ns
    • Series: TrenchFET?
    • Vgs(th) (Max) @ Id: 2.2V @ 250μA
    • Weight: 186.993455mg
    • Current - Continuous Drain (Id) @ 25°C: 8A Tc
    • Rds On (Max) @ Id, Vgs: 23m Ω @ 7A, 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 13V
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