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- Manufacturer No：SQM120P06-07L_GE3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：SQM120P06-07L_GE3
- SKU：301063
- Description：VISHAY - SQM120P06-07L_GE3 - Leistungs-MOSFET, p-Kanal, 60 V, 120 A, 0.0056 ohm, TO-263 (D2PAK), Oberflächenmontage
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SQM120P06-07L_GE3 Details
VISHAY - SQM120P06-07L_GE3 - Leistungs-MOSFET, p-Kanal, 60 V, 120 A, 0.0056 ohm, TO-263 (D2PAK), Oberflächenmontage
SQM120P06-07L_GE3 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Packaging: Tape & Reel (TR)
- Min Operating Temperature: -55°C
- Drain to Source Voltage (Vdss): 60V
- Max Operating Temperature: 175°C
- Height: 5.08mm
- Technology: MOSFET (Metal Oxide)
- Vgs (Max): ±20V
- Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
- FET Type: P-Channel
- Supplier Device Package: TO-263 (D2Pak)
- Drain to Source Breakdown Voltage: -60V
- Power Dissipation: 375W
- Drain to Source Resistance: 5.6mOhm
- Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V
- Rds On (Max) @ Id, Vgs: 6.7mOhm @ 30A, 10V
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Number of Channels: 1
- Factory Lead Time: 12 Weeks
- Published: 2015
- Max Junction Temperature (Tj): 175°C
- Gate to Source Voltage (Vgs): 20V
- Operating Temperature: -55°C~175°C TJ
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Turn On Delay Time: 15 ns
- Vgs(th) (Max) @ Id: 2.5V @ 250μA
- Series: TrenchFET?
- Current - Continuous Drain (Id) @ 25°C: 120A Tc
- Power Dissipation-Max: 375W Tc
- Turn-Off Delay Time: 97 ns
- Continuous Drain Current (ID): -120A
- Input Capacitance (Ciss) (Max) @ Vds: 14280pF @ 25V
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