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- Manufacturer No：IRFP048RPBF
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IRFP048RPBF
- SKU：178433
- Description：Tube Through Hole N-Channel Single Mosfet Transistor 70A Tc 70A 190W 250ns
User Guide
User Guide
IRFP048RPBF Details
Tube Through Hole N-Channel Single Mosfet Transistor 70A Tc 70A 190W 250ns
IRFP048RPBF Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- Number of Channels: 1
- Min Operating Temperature: -55°C
- Packaging: Tube
- Drain to Source Voltage (Vdss): 60V
- Published: 2015
- REACH SVHC: Unknown
- Element Configuration: Single
- FET Type: N-Channel
- Threshold Voltage: 4V
- Vgs (Max): ±20V
- Package / Case: TO-247-3
- Continuous Drain Current (ID): 70A
- Fall Time (Typ): 250 ns
- Width: 5.31mm
- Nominal Vgs: 4 V
- Weight: 38.000013g
- Turn-Off Delay Time: 210 ns
- Turn On Delay Time: 8.1 ns
- Current - Continuous Drain (Id) @ 25°C: 70A Tc
- Rds On Max: 18 mΩ
- Rds On (Max) @ Id, Vgs: 18mOhm @ 44A, 10V
- RoHS Status: ROHS3 Compliant
- Mounting Type: Through Hole
- Number of Elements: 1
- Radiation Hardening: No
- Factory Lead Time: 12 Weeks
- Number of Pins: 3
- Drain to Source Breakdown Voltage: 60V
- Max Operating Temperature: 175°C
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Gate to Source Voltage (Vgs): 20V
- Technology: MOSFET (Metal Oxide)
- Operating Temperature: -55°C~175°C TJ
- Vgs(th) (Max) @ Id: 4V @ 250μA
- Supplier Device Package: TO-247-3
- Length: 15.87mm
- Drain to Source Resistance: 18mOhm
- Rise Time: 250ns
- Height: 20.7mm
- Input Capacitance: 2.4nF
- Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
- Power Dissipation: 190W
- Power Dissipation-Max: 190W Tc
- Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 25V
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