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- Manufacturer No：SIR876ADP-T1-GE3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：SIR876ADP-T1-GE3
- SKU：302872
- Description：Single N-Channel 100 V 14.5 mOhm Surface Mount TrenchFET Power Mosfet - SOIC-8
User Guide
User Guide
SIR876ADP-T1-GE3 Details
Single N-Channel 100 V 14.5 mOhm Surface Mount TrenchFET Power Mosfet - SOIC-8
SIR876ADP-T1-GE3 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Elements: 1
- ECCN Code: EAR99
- Lead Free: Lead Free
- Pin Count: 8
- Number of Terminations: 5
- Max Junction Temperature (Tj): 150°C
- Published: 2014
- Transistor Element Material: SILICON
- Gate to Source Voltage (Vgs): 20V
- Operating Temperature: -55°C~150°C TJ
- Technology: MOSFET (Metal Oxide)
- Threshold Voltage: 1.5V
- Vgs (Max): ±20V
- Terminal Form: C BEND
- Subcategory: FET General Purpose Power
- Turn On Delay Time: 11 ns
- Rise Time: 16 ns
- Turn-Off Delay Time: 28 ns
- Weight: 506.605978mg
- Current - Continuous Drain (Id) @ 25°C: 40A Tc
- Vgs(th) (Max) @ Id: 2.8V @ 250μA
- JESD-30 Code: R-PDSO-C5
- Manufacturer Package Identifier: S17-0173-Single
- Rds On (Max) @ Id, Vgs: 10.8m Ω @ 20A, 10V
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Number of Channels: 1
- Radiation Hardening: No
- Number of Pins: 8
- Terminal Position: DUAL
- Drain to Source Breakdown Voltage: 100V
- Factory Lead Time: 14 Weeks
- REACH SVHC: Unknown
- Element Configuration: Single
- Power Dissipation: 5W
- FET Type: N-Channel
- Transistor Application: SWITCHING
- Operating Mode: ENHANCEMENT MODE
- Drain Current-Max (Abs) (ID): 40A
- Case Connection: DRAIN
- Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
- Fall Time (Typ): 16 ns
- Series: TrenchFET?
- Package / Case: PowerPAK? SO-8
- Height: 1.17mm
- Continuous Drain Current (ID): 15.2A
- Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V
- Resistance: 14.5mOhm
- Power Dissipation-Max: 5W Ta 62.5W Tc
- Input Capacitance (Ciss) (Max) @ Vds: 1630pF @ 50V
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