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- Manufacturer No：SI7454DDP-T1-GE3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：SI7454DDP-T1-GE3
- SKU：339055
- Description：VISHAY SI7454DDP-T1-GE3 MOSFET Transistor, N Channel, 21 A, 100 V, 0.027 ohm, 10 V, 1.5 V
User Guide
User Guide
SI7454DDP-T1-GE3 Details
VISHAY SI7454DDP-T1-GE3 MOSFET Transistor, N Channel, 21 A, 100 V, 0.027 ohm, 10 V, 1.5 V
SI7454DDP-T1-GE3 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Elements: 1
- ECCN Code: EAR99
- Radiation Hardening: No
- Lead Free: Lead Free
- Pin Count: 8
- Peak Reflow Temperature (Cel): 260
- Drain to Source Breakdown Voltage: 100V
- Threshold Voltage: 3V
- Factory Lead Time: 14 Weeks
- REACH SVHC: Unknown
- Element Configuration: Single
- Operating Temperature: -55°C~150°C TJ
- FET Type: N-Channel
- Transistor Application: SWITCHING
- Vgs (Max): ±20V
- Terminal Form: C BEND
- Turn On Delay Time: 10 ns
- Fall Time (Typ): 9 ns
- Vgs(th) (Max) @ Id: 3V @ 250μA
- Turn-Off Delay Time: 16 ns
- Continuous Drain Current (ID): 21A
- Package / Case: PowerPAK? SO-8
- Width: 5.26mm
- JESD-30 Code: R-PDSO-C5
- Gate Charge (Qg) (Max) @ Vgs: 19.5nC @ 10V
- Avalanche Energy Rating (Eas): 7.2 mJ
- Power Dissipation-Max: 4.1W Ta 29.7W Tc
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Number of Channels: 1
- Pbfree Code: yes
- JESD-609 Code: e3
- Number of Pins: 8
- Terminal Position: DUAL
- Number of Terminations: 5
- Time@Peak Reflow Temperature-Max (s): 30
- Max Junction Temperature (Tj): 150°C
- Published: 2014
- Transistor Element Material: SILICON
- Gate to Source Voltage (Vgs): 20V
- Terminal Finish: MATTE TIN
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- Pulsed Drain Current-Max (IDM): 40A
- Case Connection: DRAIN
- Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
- Rise Time: 13 ns
- Height: 1.12mm
- Series: TrenchFET?
- Resistance: 33mOhm
- Length: 6.25mm
- Current - Continuous Drain (Id) @ 25°C: 21A Tc
- Power Dissipation: 29.7W
- Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 50V
- Rds On (Max) @ Id, Vgs: 33m Ω @ 10A, 10V
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