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- Manufacturer No：SI4465ADY-T1-E3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：SI4465ADY-T1-E3
- SKU：303669
- Description：MOSFET P-CH 8V 8SOIC
User Guide
User Guide
SI4465ADY-T1-E3 Details
MOSFET P-CH 8V 8SOIC
SI4465ADY-T1-E3 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Elements: 1
- Pbfree Code: yes
- JESD-609 Code: e3
- Contact Plating: Tin
- Number of Terminations: 8
- Terminal Position: DUAL
- REACH SVHC: No SVHC
- Time@Peak Reflow Temperature-Max (s): 40
- Published: 2006
- Element Configuration: Single
- Power Dissipation: 3W
- Drain Current-Max (Abs) (ID): 20A
- Package / Case: 8-SOIC (0.154, 3.90mm Width)
- Operating Mode: ENHANCEMENT MODE
- Gate to Source Voltage (Vgs): 8V
- Subcategory: Other Transistors
- Series: TrenchFET?
- Resistance: 9mOhm
- Turn On Delay Time: 33 ns
- Rise Time: 170 ns
- Fall Time (Typ): 112 ns
- Turn-Off Delay Time: 168 ns
- Gate Charge (Qg) (Max) @ Vgs: 85nC @ 4.5V
- Continuous Drain Current (ID): -13.7A
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- ECCN Code: EAR99
- Radiation Hardening: No
- Lead Free: Lead Free
- Number of Pins: 8
- Pin Count: 8
- Terminal Form: GULL WING
- Peak Reflow Temperature (Cel): 260
- Factory Lead Time: 14 Weeks
- Transistor Element Material: SILICON
- Length: 5mm
- Width: 4mm
- Operating Temperature: -55°C~150°C TJ
- Technology: MOSFET (Metal Oxide)
- Height: 1.5mm
- DS Breakdown Voltage-Min: 8V
- FET Type: P-Channel
- Vgs(th) (Max) @ Id: 1V @ 250μA
- Vgs (Max): ±8V
- Drive Voltage (Max Rds On,Min Rds On): 1.8V 4.5V
- Weight: 186.993455mg
- Threshold Voltage: -450mV
- Power Dissipation-Max: 3W Ta 6.5W Tc
- Rds On (Max) @ Id, Vgs: 9m Ω @ 14A, 4.5V
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