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- Manufacturer No：SI4100DY-T1-E3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：SI4100DY-T1-E3
- SKU：234526
- Description：Trans MOSFET N-CH 100V 4.4A 8-Pin SOIC N T/R
User Guide
User Guide
SI4100DY-T1-E3 Details
Trans MOSFET N-CH 100V 4.4A 8-Pin SOIC N T/R
SI4100DY-T1-E3 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Elements: 1
- ECCN Code: EAR99
- Radiation Hardening: No
- Lead Free: Lead Free
- Number of Pins: 8
- Pin Count: 8
- Terminal Form: GULL WING
- Drain to Source Voltage (Vdss): 100V
- Factory Lead Time: 14 Weeks
- Transistor Element Material: SILICON
- Length: 5mm
- Width: 4mm
- Operating Temperature: -55°C~150°C TJ
- FET Type: N-Channel
- Transistor Application: SWITCHING
- Vgs (Max): ±20V
- Turn On Delay Time: 10 ns
- Power Dissipation: 2.5W
- Height: 1.55mm
- Series: TrenchFET?
- Drive Voltage (Max Rds On,Min Rds On): 6V 10V
- Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
- Drain-source On Resistance-Max: 0.063Ohm
- Power Dissipation-Max: 2.5W Ta 6W Tc
- Rds On (Max) @ Id, Vgs: 63m Ω @ 4.4A, 10V
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Number of Channels: 1
- Pbfree Code: yes
- JESD-609 Code: e3
- Contact Plating: Tin
- Number of Terminations: 8
- Terminal Position: DUAL
- Peak Reflow Temperature (Cel): 260
- Time@Peak Reflow Temperature-Max (s): 40
- Published: 2009
- Element Configuration: Single
- Gate to Source Voltage (Vgs): 20V
- Pulsed Drain Current-Max (IDM): 20A
- Package / Case: 8-SOIC (0.154, 3.90mm Width)
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- Subcategory: FET General Purpose Power
- Fall Time (Typ): 10 ns
- Turn-Off Delay Time: 15 ns
- Rise Time: 12 ns
- Continuous Drain Current (ID): 4.4A
- Vgs(th) (Max) @ Id: 4.5V @ 250μA
- Weight: 186.993455mg
- Current - Continuous Drain (Id) @ 25°C: 6.8A Tc
- Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 50V
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