SI3456DDV-T1-GE3Vishay Siliconix
    Add to like
    Add to project list
    • Manufacturer No：
      SI3456DDV-T1-GE3
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      Get the PDF file
    • SKU：
      305541
    • Description：
      MOSFET N-CH 30V 6.3A 6-TSOP
    • Quantity：
        • RFQ
        • Add To Cart
    • Material flow:
    • Payment:
    Inventory:93601
    • Qty Unit Price price
    • 1 $68.683 $68.683
    • 10 $68.002 $680.02
    • 100 $67.328 $6732.8
    • 1000 $66.661 $66661
    • 10000 $66 $660000

    Not the price you want? Send RFQ Now and we'll contact you ASAP

    • Manufacturer No：
      SI3456DDV-T1-GE3
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      SI3456DDV-T1-GE3
    • SKU：
      305541
    • Description：
      MOSFET N-CH 30V 6.3A 6-TSOP

    User Guide

    User Guide

    SI3456DDV-T1-GE3 Details

    MOSFET N-CH 30V 6.3A 6-TSOP

    SI3456DDV-T1-GE3 Specification Parameters

    • Part Status: Active
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mount: Surface Mount
    • Number of Elements: 1
    • ECCN Code: EAR99
    • Radiation Hardening: No
    • Lead Free: Lead Free
    • Published: 2013
    • Number of Pins: 6
    • Terminal Form: GULL WING
    • Peak Reflow Temperature (Cel): 260
    • Time@Peak Reflow Temperature-Max (s): 30
    • Drain Current-Max (Abs) (ID): 5A
    • Transistor Element Material: SILICON
    • Gate to Source Voltage (Vgs): 20V
    • Operating Temperature: -55°C~150°C TJ
    • FET Type: N-Channel
    • Transistor Application: SWITCHING
    • Vgs (Max): ±20V
    • Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
    • Package / Case: SOT-23-6 Thin, TSOT-23-6
    • Fall Time (Typ): 13 ns
    • Vgs(th) (Max) @ Id: 3V @ 250μA
    • Series: TrenchFET?
    • Weight: 19.986414mg
    • Current - Continuous Drain (Id) @ 25°C: 6.3A Tc
    • Power Dissipation-Max: 1.7W Ta 2.7W Tc
    • RoHS Status: ROHS3 Compliant
    • Mounting Type: Surface Mount
    • Packaging: Tape & Reel (TR)
    • Number of Channels: 1
    • Pbfree Code: yes
    • JESD-609 Code: e3
    • Terminal Position: DUAL
    • Number of Terminations: 6
    • Pin Count: 6
    • REACH SVHC: No SVHC
    • Terminal Finish: Matte Tin (Sn)
    • Factory Lead Time: 14 Weeks
    • Continuous Drain Current (ID): 5A
    • Element Configuration: Single
    • Drain to Source Breakdown Voltage: 30V
    • Threshold Voltage: 1.2V
    • Technology: MOSFET (Metal Oxide)
    • Operating Mode: ENHANCEMENT MODE
    • Subcategory: FET General Purpose Power
    • Turn On Delay Time: 12 ns
    • Resistance: 40mOhm
    • Rise Time: 13 ns
    • Turn-Off Delay Time: 16 ns
    • Power Dissipation: 1.7W
    • Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V
    • Rds On (Max) @ Id, Vgs: 40m Ω @ 5A, 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 15V
    Search for similar products

    SI3456DDV-T1-GE3 Similar Products

    The four parts on the right have similar specifications to Vishay Siliconix & SI3456DDV-T1-GE3

    Hot Search

    Excellent

    Based on reviews

    Excellent

    Based on reviews

    LKR uses cookies to help deliver a better online experience. You can see what cookies we server and how to set your preferences in our Cookies Policy, if you agree on our use of cookies please click continue. When browsing and using our website, LKR also collects, stores and/or processes personal data, please read our Term & Condition and Privacy Policy to find out more.

    About Us

    Support

    Quick Links

    Contact Us

    Our social media
    We support logistics
    We Accept Payment Via