SI1972DH-T1-E3Vishay Siliconix
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    • Manufacturer No：
      SI1972DH-T1-E3
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Arrays
    • Datasheet：
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    • SKU：
      306770
    • Description：
      MOSFET 2N-CH 30V 1.3A SC70-6
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    • Manufacturer No：
      SI1972DH-T1-E3
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Arrays
    • Datasheet：
      SI1972DH-T1-E3
    • SKU：
      306770
    • Description：
      MOSFET 2N-CH 30V 1.3A SC70-6

    User Guide

    User Guide

    SI1972DH-T1-E3 Details

    MOSFET 2N-CH 30V 1.3A SC70-6

    SI1972DH-T1-E3 Specification Parameters

    • RoHS Status: ROHS3 Compliant
    • Number of Elements: 2
    • Mount: Surface Mount
    • ECCN Code: EAR99
    • Radiation Hardening: No
    • Lead Free: Lead Free
    • Published: 2013
    • Number of Pins: 6
    • Terminal Form: GULL WING
    • Terminal Finish: Matte Tin (Sn)
    • Length: 2mm
    • REACH SVHC: Unknown
    • FET Feature: Standard
    • Height: 1mm
    • Drain to Source Voltage (Vdss): 30V
    • Width: 1.25mm
    • Transistor Application: SWITCHING
    • Rise Time: 10ns
    • Fall Time (Typ): 10 ns
    • FET Technology: METAL-OXIDE SEMICONDUCTOR
    • Power - Max: 1.25W
    • Package / Case: 6-TSSOP, SC-88, SOT-363
    • FET Type: 2 N-Channel (Dual)
    • Power Dissipation: 740mW
    • Vgs(th) (Max) @ Id: 2.8V @ 250μA
    • Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 10V
    • Rds On (Max) @ Id, Vgs: 225m Ω @ 1.3A, 10V
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mounting Type: Surface Mount
    • Packaging: Tape & Reel (TR)
    • Pbfree Code: yes
    • JESD-609 Code: e3
    • Part Status: Obsolete
    • Number of Terminations: 6
    • Pin Count: 6
    • Peak Reflow Temperature (Cel): 260
    • Time@Peak Reflow Temperature-Max (s): 40
    • Element Configuration: Dual
    • Transistor Element Material: SILICON
    • Threshold Voltage: 2.8V
    • Gate to Source Voltage (Vgs): 20V
    • DS Breakdown Voltage-Min: 30V
    • Operating Temperature: -55°C~150°C TJ
    • Operating Mode: ENHANCEMENT MODE
    • Subcategory: FET General Purpose Power
    • Turn-Off Delay Time: 10 ns
    • Continuous Drain Current (ID): 1.3A
    • Turn On Delay Time: 5 ns
    • Series: TrenchFET?
    • Resistance: 190mOhm
    • Max Power Dissipation: 740mW
    • Nominal Vgs: 2.8 V
    • Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 15V
    • Base Part Number: SI1972
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