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- Manufacturer No：SI6926ADQ-T1-E3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Arrays
- Datasheet：SI6926ADQ-T1-E3
- SKU：307236
- Description：MOSFET DUAL N-CH 2.5V (G-S)
User Guide
User Guide
SI6926ADQ-T1-E3 Details
MOSFET DUAL N-CH 2.5V (G-S)
SI6926ADQ-T1-E3 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Number of Channels: 2
- Mount: Surface Mount
- ECCN Code: EAR99
- Radiation Hardening: No
- Lead Free: Lead Free
- Number of Terminations: 8
- Terminal Form: GULL WING
- Terminal Finish: Matte Tin (Sn)
- Factory Lead Time: 14 Weeks
- REACH SVHC: Unknown
- Height: 1mm
- Length: 3mm
- Operating Temperature: -55°C~150°C TJ
- Width: 4.4mm
- Gate to Source Voltage (Vgs): 8V
- Continuous Drain Current (ID): 4.5A
- Package / Case: 8-TSSOP (0.173, 4.40mm Width)
- FET Feature: Logic Level Gate
- Rise Time: 16 ns
- Vgs(th) (Max) @ Id: 1V @ 250μA
- Current - Continuous Drain (Id) @ 25°C: 4.1A
- Power Dissipation: 830mW
- Nominal Vgs: 400 mV
- Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 4.5V
- Base Part Number: SI6926
- RoHS Status: ROHS3 Compliant
- Number of Elements: 2
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Pbfree Code: yes
- JESD-609 Code: e3
- Number of Pins: 8
- Pin Count: 8
- Peak Reflow Temperature (Cel): 260
- Time@Peak Reflow Temperature-Max (s): 40
- Element Configuration: Dual
- Transistor Element Material: SILICON
- Drain to Source Breakdown Voltage: 20V
- Published: 2017
- Resistance: 30mOhm
- Operating Mode: ENHANCEMENT MODE
- Subcategory: FET General Purpose Power
- FET Technology: METAL-OXIDE SEMICONDUCTOR
- Turn On Delay Time: 6 ns
- Fall Time (Typ): 16 ns
- FET Type: 2 N-Channel (Dual)
- Drain Current-Max (Abs) (ID): 4.1A
- Max Power Dissipation: 830mW
- Turn-Off Delay Time: 46 ns
- Weight: 157.991892mg
- Rds On (Max) @ Id, Vgs: 30m Ω @ 4.5A, 4.5V
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