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- Manufacturer No：SIR846DP-T1-GE3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：SIR846DP-T1-GE3
- SKU：313212
- Description：MOSFET 100V 60A 104W 7.8mohm @ 10V
User Guide
User Guide
SIR846DP-T1-GE3 Details
MOSFET 100V 60A 104W 7.8mohm @ 10V
SIR846DP-T1-GE3 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Elements: 1
- ECCN Code: EAR99
- Radiation Hardening: No
- Number of Pins: 8
- Terminal Position: DUAL
- Number of Terminations: 5
- Time@Peak Reflow Temperature-Max (s): 40
- Published: 2009
- Transistor Element Material: SILICON
- Gate to Source Voltage (Vgs): 20V
- Operating Temperature: -55°C~150°C TJ
- Technology: MOSFET (Metal Oxide)
- Threshold Voltage: 1.5V
- Vgs (Max): ±20V
- Case Connection: DRAIN
- Continuous Drain Current (ID): 60A
- Turn On Delay Time: 18 ns
- Series: TrenchFET?
- Package / Case: PowerPAK? SO-8
- Vgs(th) (Max) @ Id: 3.5V @ 250μA
- Power Dissipation: 6.25W
- Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V
- Resistance: 7.8mOhm
- Nominal Vgs: 3.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 2870pF @ 50V
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Number of Channels: 1
- Pbfree Code: yes
- Lead Free: Lead Free
- Pin Count: 8
- Peak Reflow Temperature (Cel): 260
- Drain to Source Breakdown Voltage: 100V
- Factory Lead Time: 14 Weeks
- REACH SVHC: Unknown
- Element Configuration: Single
- Drain Current-Max (Abs) (ID): 20A
- FET Type: N-Channel
- Transistor Application: SWITCHING
- Operating Mode: ENHANCEMENT MODE
- Terminal Form: C BEND
- Subcategory: FET General Purpose Power
- Fall Time (Typ): 20 ns
- Rise Time: 18 ns
- Turn-Off Delay Time: 36 ns
- Weight: 506.605978mg
- Current - Continuous Drain (Id) @ 25°C: 60A Tc
- JESD-30 Code: R-XDSO-C5
- Drive Voltage (Max Rds On,Min Rds On): 7.5V 10V
- Power Dissipation-Max: 6.25W Ta 104W Tc
- Rds On (Max) @ Id, Vgs: 7.8m Ω @ 20A, 10V
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