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- Manufacturer No：SI3433CDV-T1-GE3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：SI3433CDV-T1-GE3
- SKU：319724
- Description：SI3433CDV-T1-GE3 P-channel MOSFET Transistor; 6 A; 20 V; 6-Pin TSOP
User Guide
User Guide
SI3433CDV-T1-GE3 Details
SI3433CDV-T1-GE3 P-channel MOSFET Transistor; 6 A; 20 V; 6-Pin TSOP
SI3433CDV-T1-GE3 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Elements: 1
- ECCN Code: EAR99
- Radiation Hardening: No
- Lead Free: Lead Free
- Number of Terminations: 6
- Pin Count: 6
- Peak Reflow Temperature (Cel): 260
- Time@Peak Reflow Temperature-Max (s): 30
- Factory Lead Time: 14 Weeks
- REACH SVHC: Unknown
- Element Configuration: Single
- Operating Temperature: -55°C~150°C TJ
- Technology: MOSFET (Metal Oxide)
- Height: 1.1mm
- Gate to Source Voltage (Vgs): 8V
- Width: 1.65mm
- Turn-Off Delay Time: 50 ns
- Turn On Delay Time: 20 ns
- Power Dissipation: 1.6W
- Drain to Source Breakdown Voltage: -20V
- Series: TrenchFET?
- Vgs (Max): ±8V
- Resistance: 38mOhm
- Current - Continuous Drain (Id) @ 25°C: 6A Tc
- Nominal Vgs: -1 V
- Continuous Drain Current (ID): -5.2A
- Rds On (Max) @ Id, Vgs: 38m Ω @ 5.2A, 4.5V
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Number of Channels: 1
- Pbfree Code: yes
- JESD-609 Code: e3
- Terminal Position: DUAL
- Number of Pins: 6
- Terminal Form: GULL WING
- Terminal Finish: Matte Tin (Sn)
- Max Junction Temperature (Tj): 150°C
- Published: 2014
- Transistor Element Material: SILICON
- Drain to Source Voltage (Vdss): 20V
- Drain Current-Max (Abs) (ID): 6A
- Transistor Application: SWITCHING
- Operating Mode: ENHANCEMENT MODE
- Subcategory: Other Transistors
- Length: 3.05mm
- Fall Time (Typ): 20 ns
- FET Type: P-Channel
- Package / Case: SOT-23-6 Thin, TSOT-23-6
- Rise Time: 22 ns
- Vgs(th) (Max) @ Id: 1V @ 250μA
- Drive Voltage (Max Rds On,Min Rds On): 1.8V 4.5V
- Threshold Voltage: -1V
- Weight: 19.986414mg
- Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 10V
- Gate Charge (Qg) (Max) @ Vgs: 45nC @ 8V
- Power Dissipation-Max: 1.6W Ta 3.3W Tc
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