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- Manufacturer No：SI7218DN-T1-E3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Arrays
- Datasheet：SI7218DN-T1-E3
- SKU：324523
- Description：MOSFET 30V 24A 23W
User Guide
User Guide
SI7218DN-T1-E3 Details
MOSFET 30V 24A 23W
SI7218DN-T1-E3 Specification Parameters
- RoHS Status: ROHS3 Compliant
- Number of Elements: 2
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Pbfree Code: yes
- JESD-609 Code: e3
- Part Status: Obsolete
- Pin Count: 8
- Peak Reflow Temperature (Cel): 260
- Time@Peak Reflow Temperature-Max (s): 30
- Published: 2009
- FET Feature: Standard
- Drain to Source Breakdown Voltage: 30V
- Drain Current-Max (Abs) (ID): 8A
- Transistor Application: SWITCHING
- Terminal Form: C BEND
- Pulsed Drain Current-Max (IDM): 35A
- Width: 3.05mm
- Turn-Off Delay Time: 10 ns
- Turn On Delay Time: 15 ns
- Resistance: 25mOhm
- Vgs(th) (Max) @ Id: 3V @ 250μA
- FET Type: 2 N-Channel (Dual)
- Height: 1.04mm
- Power Dissipation: 23W
- Package / Case: PowerPAK? 1212-8 Dual
- JESD-30 Code: S-XDSO-C6
- Rds On (Max) @ Id, Vgs: 25m Ω @ 8A, 10V
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Number of Channels: 2
- Mount: Surface Mount
- ECCN Code: EAR99
- Radiation Hardening: No
- Lead Free: Lead Free
- Number of Pins: 8
- Number of Terminations: 6
- Terminal Finish: Matte Tin (Sn)
- Element Configuration: Dual
- Transistor Element Material: SILICON
- Gate to Source Voltage (Vgs): 20V
- Operating Temperature: -55°C~150°C TJ
- Continuous Drain Current (ID): 8A
- Operating Mode: ENHANCEMENT MODE
- Case Connection: DRAIN
- Length: 3.05mm
- Fall Time (Typ): 10 ns
- FET Technology: METAL-OXIDE SEMICONDUCTOR
- Current - Continuous Drain (Id) @ 25°C: 24A
- Rise Time: 12 ns
- Series: TrenchFET?
- Subcategory: FET General Purpose Powers
- Max Power Dissipation: 23W
- Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
- Avalanche Energy Rating (Eas): 5 mJ
- Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 15V
- Base Part Number: SI7218
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