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- Manufacturer No：SI7655DN-T1-GE3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：SI7655DN-T1-GE3
- SKU：324922
- Description：MOSFET P-CH 20V 40A PPAK 1212
User Guide
User Guide
SI7655DN-T1-GE3 Details
MOSFET P-CH 20V 40A PPAK 1212
SI7655DN-T1-GE3 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- ECCN Code: EAR99
- JESD-609 Code: e3
- Number of Pins: 8
- REACH SVHC: No SVHC
- Gate to Source Voltage (Vgs): 12V
- Element Configuration: Dual
- Drain to Source Voltage (Vdss): 20V
- Transistor Application: SWITCHING
- Terminal Form: C BEND
- Length: 3.3mm
- FET Type: P-Channel
- Height: 780μm
- Series: TrenchFET?
- Turn-Off Delay Time: 110 ns
- Power Dissipation: 4.8W
- Operating Temperature: -50°C~150°C TJ
- Vgs(th) (Max) @ Id: 1.1V @ 250μA
- Gate Charge (Qg) (Max) @ Vgs: 225nC @ 10V
- JESD-30 Code: S-PDSO-C5
- Continuous Drain Current (ID): -40A
- Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 10V
- RoHS Status: ROHS3 Compliant
- Number of Channels: 2
- Mount: Surface Mount
- Number of Elements: 1
- Radiation Hardening: No
- Contact Plating: Tin
- Published: 2013
- Number of Terminations: 5
- Factory Lead Time: 14 Weeks
- Transistor Element Material: SILICON
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- Case Connection: DRAIN
- Width: 3.3mm
- Turn On Delay Time: 45 ns
- Drain to Source Breakdown Voltage: -20V
- Vgs (Max): ±12V
- Threshold Voltage: -500mV
- Current - Continuous Drain (Id) @ 25°C: 40A Tc
- Drive Voltage (Max Rds On,Min Rds On): 2.5V 10V
- Package / Case: PowerPAK? 1212-8S
- Drain-source On Resistance-Max: 0.0036Ohm
- Rds On (Max) @ Id, Vgs: 3.6m Ω @ 20A, 10V
- Power Dissipation-Max: 4.8W Ta 57W Tc
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