SI4466DY-T1-E3Vishay Siliconix
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    • Manufacturer No：
      SI4466DY-T1-E3
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
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    • SKU：
      325864
    • Description：
      MOSFET N-CH 20V 9.5A 8-SOIC
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    • Manufacturer No：
      SI4466DY-T1-E3
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      SI4466DY-T1-E3
    • SKU：
      325864
    • Description：
      MOSFET N-CH 20V 9.5A 8-SOIC

    User Guide

    User Guide

    SI4466DY-T1-E3 Details

    MOSFET N-CH 20V 9.5A 8-SOIC

    SI4466DY-T1-E3 Specification Parameters

    • RoHS Status: ROHS3 Compliant
    • Mounting Type: Surface Mount
    • Packaging: Tape & Reel (TR)
    • ECCN Code: EAR99
    • Radiation Hardening: No
    • Lead Free: Lead Free
    • Number of Pins: 8
    • Pin Count: 8
    • Terminal Form: GULL WING
    • Terminal Finish: Matte Tin (Sn)
    • Gate to Source Voltage (Vgs): 12V
    • REACH SVHC: Unknown
    • Element Configuration: Single
    • Operating Temperature: -55°C~150°C TJ
    • FET Type: N-Channel
    • Transistor Application: SWITCHING
    • Operating Mode: ENHANCEMENT MODE
    • Fall Time (Typ): 15 ns
    • Turn On Delay Time: 20 ns
    • Threshold Voltage: 600mV
    • Drain Current-Max (Abs) (ID): 9.5A
    • Vgs (Max): ±12V
    • Drive Voltage (Max Rds On,Min Rds On): 2.5V 4.5V
    • Vgs(th) (Max) @ Id: 1.4V @ 250μA
    • Gate Charge (Qg) (Max) @ Vgs: 60nC @ 4.5V
    • Rds On (Max) @ Id, Vgs: 9m Ω @ 13.5A, 4.5V
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mount: Surface Mount
    • Number of Elements: 1
    • Pbfree Code: yes
    • JESD-609 Code: e3
    • Part Status: Obsolete
    • Number of Terminations: 8
    • Terminal Position: DUAL
    • Peak Reflow Temperature (Cel): 260
    • Published: 2011
    • Time@Peak Reflow Temperature-Max (s): 40
    • Transistor Element Material: SILICON
    • Drain to Source Breakdown Voltage: 20V
    • Package / Case: 8-SOIC (0.154, 3.90mm Width)
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation: 1.5W
    • Pulsed Drain Current-Max (IDM): 50A
    • Rise Time: 15 ns
    • Turn-Off Delay Time: 150 ns
    • Series: TrenchFET?
    • Continuous Drain Current (ID): 13.5A
    • Resistance: 9mOhm
    • Power Dissipation-Max: 1.5W Ta
    • Nominal Vgs: 600 mV
    • Current - Continuous Drain (Id) @ 25°C: 9.5A Ta
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