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- Manufacturer No：SI4914BDY-T1-E3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Arrays
- Datasheet：SI4914BDY-T1-E3
- SKU：328303
- Description：MOSFET 2N-CH 30V 8.4A 8-SOIC
User Guide
User Guide
SI4914BDY-T1-E3 Details
MOSFET 2N-CH 30V 8.4A 8-SOIC
SI4914BDY-T1-E3 Specification Parameters
- RoHS Status: ROHS3 Compliant
- Number of Elements: 2
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Min Operating Temperature: -55°C
- Number of Pins: 8
- Published: 2009
- Length: 5mm
- Gate to Source Voltage (Vgs): 20V
- Drain to Source Breakdown Voltage: 30V
- Operating Temperature: -55°C~150°C TJ
- Height: 1.5mm
- Fall Time (Typ): 9 ns
- Supplier Device Package: 8-SO
- Max Power Dissipation: 3.1W
- Rise Time: 9ns
- FET Type: 2 N-Channel (Half Bridge)
- Series: LITTLE FOOT?
- Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 4.5V
- Base Part Number: SI4914
- Current - Continuous Drain (Id) @ 25°C: 8.4A 8A
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Number of Channels: 2
- Mount: Surface Mount
- Radiation Hardening: No
- Part Status: Obsolete
- Max Operating Temperature: 150°C
- Factory Lead Time: 15 Weeks
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Width: 4mm
- Package / Case: 8-SOIC (0.154, 3.90mm Width)
- Turn On Delay Time: 10 ns
- Turn-Off Delay Time: 16 ns
- Continuous Drain Current (ID): 7.4A
- Drain to Source Resistance: 23mOhm
- Weight: 506.605978mg
- Vgs(th) (Max) @ Id: 2.7V @ 250μA
- Rds On Max: 21 mΩ
- Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V
- Power - Max: 2.7W 3.1W
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