Add to like
Add to project list
- Home >
- Manufacturer No：
- Manufacturer：
- Category：
- Datasheet：
- SKU：
- Description：
- Quantity：
- RFQ
Add To Cart
- Material flow:
- Payment:
Inventory:19766
- Qty Unit Price price
- 1 $1.178 $1.178
- 10 $1.166 $11.66
- 100 $1.154 $115.4
- 1000 $1.142 $1142
- 10000 $1.13 $11300
Not the price you want? Send RFQ Now and we'll contact you ASAP
- Manufacturer No：SI4946BEY-T1-E3
- Manufacturer：Vishay
- Category：Transistors - FETs, MOSFETs - Arrays
- Datasheet：SI4946BEY-T1-E3
- SKU：329298
- Description：MOSFET 2N-CH 60V 6.5A 8-SOIC
User Guide
User Guide
SI4946BEY-T1-E3 Details
MOSFET 2N-CH 60V 6.5A 8-SOIC
SI4946BEY-T1-E3 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Number of Channels: 2
- Mount: Surface Mount
- ECCN Code: EAR99
- JESD-609 Code: e3
- Number of Pins: 8
- Pin Count: 8
- REACH SVHC: No SVHC
- Drain to Source Voltage (Vdss): 60V
- Time@Peak Reflow Temperature-Max (s): 40
- Element Configuration: Dual
- Max Junction Temperature (Tj): 175°C
- Length: 5mm
- Width: 4mm
- Terminal Finish: MATTE TIN
- Pulsed Drain Current-Max (IDM): 30A
- Operating Mode: ENHANCEMENT MODE
- Fall Time (Typ): 10 ns
- FET Technology: METAL-OXIDE SEMICONDUCTOR
- Rise Time: 12 ns
- Max Power Dissipation: 2.4W
- Vgs(th) (Max) @ Id: 3V @ 250μA
- Series: TrenchFET?
- Drain Current-Max (Abs) (ID): 5.3A
- Resistance: 41mOhm
- Power - Max: 3.7W
- Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 30V
- RoHS Status: ROHS3 Compliant
- Number of Elements: 2
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Radiation Hardening: No
- Lead Free: Lead Free
- Number of Terminations: 8
- Terminal Form: GULL WING
- Peak Reflow Temperature (Cel): 260
- Drain to Source Breakdown Voltage: 60V
- Factory Lead Time: 14 Weeks
- Published: 2007
- Transistor Element Material: SILICON
- Gate to Source Voltage (Vgs): 20V
- Package / Case: 8-SOIC (0.154, 3.90mm Width)
- Height: 1.75mm
- Operating Temperature: -55°C~175°C TJ
- Turn On Delay Time: 10 ns
- Threshold Voltage: 2.4V
- Turn-Off Delay Time: 25 ns
- Continuous Drain Current (ID): 6.5A
- Power Dissipation: 2.4W
- FET Feature: Logic Level Gate
- FET Type: 2 N-Channel (Dual)
- Weight: 506.605978mg
- Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
- Rds On (Max) @ Id, Vgs: 41m Ω @ 5.3A, 10V
- Base Part Number: SI4946
Search for similar products
SI4946BEY-T1-E3 Similar Products
The four parts on the right have similar specifications to Vishay & SI4946BEY-T1-E3
Vishay — Manufacturer Introduction
Vishay Intertechnology is one of the world's largest manufacturers of discrete semiconductors and passive electronic components. Vishay has grown through acquisitions to include such top names as Dale, Sfernice, Draloric, Sprague, Vitramon, Siliconix, General Semiconductor, BCcomponents, and Beyschlag. Vishay's portfolio of brands represents an unmatched collection of discrete semiconductors and passive components. All of these brands and products are part of one global manufacturer: Vishay.
Hot Search
Excellent
Based on reviews
Excellent
Based on reviews
LKR uses cookies to help deliver a better online experience. You can see what cookies we server and how to set your preferences in our
Cookies Policy, if you agree on our use of cookies please click continue. When browsing and using our website, LKR also collects, stores and/or processes personal data,
please read our Term & Condition
and
Privacy Policy
to find out more.
About Us
Our social media
We support logistics
We Accept Payment Via
