Add to like
Add to project list
  • Manufacturer No:
    SI3483CDV-T1-GE3
  • Manufacturer:
    Vishay Siliconix
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    Get the PDF file
  • SKU:
    334702
  • Description:
    MOSFET P-CH 30V 8A 6-TSOP
  • Quantity:
      • RFQ
      • Add To Cart
  • Material flow:
  • Payment:
Inventory:83176
  • Qty Unit Price price
  • 1 $0.94 $0.94
  • 10 $0.93 $9.3
  • 100 $0.92 $92
  • 1000 $0.91 $910
  • 10000 $0.9 $9000

Not the price you want? Send RFQ Now and we'll contact you ASAP

  • Manufacturer No:
    SI3483CDV-T1-GE3
  • Manufacturer:
    Vishay Siliconix
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    SI3483CDV-T1-GE3
  • SKU:
    334702
  • Description:
    MOSFET P-CH 30V 8A 6-TSOP

SI3483CDV-T1-GE3 Details

MOSFET P-CH 30V 8A 6-TSOP

SI3483CDV-T1-GE3 Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mount: Surface Mount
  • Number of Elements: 1
  • ECCN Code: EAR99
  • Radiation Hardening: No
  • Contact Plating: Tin
  • Number of Terminations: 6
  • Pin Count: 6
  • Peak Reflow Temperature (Cel): 260
  • Factory Lead Time: 14 Weeks
  • Transistor Element Material: SILICON
  • Power Dissipation: 2W
  • Gate to Source Voltage (Vgs): 20V
  • Published: 2017
  • Drain Current-Max (Abs) (ID): 8A
  • Transistor Application: SWITCHING
  • Vgs (Max): ±20V
  • Width: 1.65mm
  • Turn On Delay Time: 10 ns
  • Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
  • FET Type: P-Channel
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Series: TrenchFET?
  • Threshold Voltage: -3V
  • Weight: 19.986414mg
  • Drain-source On Resistance-Max: 0.034Ohm
  • Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 15V
  • Continuous Drain Current (ID): -6.1A
  • RoHS Status: ROHS3 Compliant
  • Mounting Type: Surface Mount
  • Packaging: Tape & Reel (TR)
  • Number of Channels: 1
  • Pbfree Code: yes
  • Lead Free: Lead Free
  • Terminal Position: DUAL
  • Number of Pins: 6
  • Terminal Form: GULL WING
  • Time@Peak Reflow Temperature-Max (s): 30
  • REACH SVHC: Unknown
  • Element Configuration: Single
  • Height: 1mm
  • Drain to Source Voltage (Vdss): 30V
  • Operating Temperature: -55°C~150°C TJ
  • Technology: MOSFET (Metal Oxide)
  • Operating Mode: ENHANCEMENT MODE
  • Subcategory: Other Transistors
  • Length: 3.05mm
  • Fall Time (Typ): 10 ns
  • Rise Time: 15 ns
  • Turn-Off Delay Time: 30 ns
  • Vgs(th) (Max) @ Id: 3V @ 250μA
  • Drain to Source Breakdown Voltage: -30V
  • Current - Continuous Drain (Id) @ 25°C: 8A Tc
  • Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
  • Nominal Vgs: -3 V
  • Power Dissipation-Max: 2W Ta 4.2W Tc
  • Rds On (Max) @ Id, Vgs: 34m Ω @ 6.1A, 10V

Excellent

Based on reviews

Excellent

Based on reviews

LKR uses cookies to help deliver a better online experience. You can see what cookies we server and how to set your preferences in our Cookies Policy, if you agree on our use of cookies please click continue. When browsing and using our website, LKR also collects, stores and/or processes personal data, please read our Term & Condition and Privacy Policy to find out more.
Our social media
We support logistics
We Accept Payment Via