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- Manufacturer No：SI9407BDY-T1-GE3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：SI9407BDY-T1-GE3
- SKU：343324
- Description：MOSFET P-CH 60V 4.7A 8-SOIC
User Guide
User Guide
SI9407BDY-T1-GE3 Details
MOSFET P-CH 60V 4.7A 8-SOIC
SI9407BDY-T1-GE3 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Elements: 1
- ECCN Code: EAR99
- Radiation Hardening: No
- Lead Free: Lead Free
- Number of Terminations: 8
- Terminal Position: DUAL
- REACH SVHC: No SVHC
- Drain to Source Voltage (Vdss): 60V
- Published: 2011
- Max Junction Temperature (Tj): 150°C
- Element Configuration: Single
- Gate to Source Voltage (Vgs): 20V
- Operating Temperature: -55°C~150°C TJ
- Height: 1.75mm
- Transistor Application: SWITCHING
- Vgs (Max): ±20V
- Turn On Delay Time: 10 ns
- Turn-Off Delay Time: 35 ns
- Fall Time (Typ): 30 ns
- Power Dissipation: 2.4W
- Vgs(th) (Max) @ Id: 3V @ 250μA
- Threshold Voltage: -3V
- Weight: 506.605978mg
- Current - Continuous Drain (Id) @ 25°C: 4.7A Tc
- Power Dissipation-Max: 2.4W Ta 5W Tc
- Rds On (Max) @ Id, Vgs: 120m Ω @ 3.2A, 10V
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Number of Channels: 1
- Pbfree Code: yes
- JESD-609 Code: e3
- Number of Pins: 8
- Pin Count: 8
- Terminal Form: GULL WING
- Peak Reflow Temperature (Cel): 260
- Terminal Finish: Matte Tin (Sn)
- Time@Peak Reflow Temperature-Max (s): 30
- Transistor Element Material: SILICON
- Length: 5mm
- Width: 4mm
- Package / Case: 8-SOIC (0.154, 3.90mm Width)
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- Subcategory: Other Transistors
- Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
- FET Type: P-Channel
- Rise Time: 70 ns
- Resistance: 120mOhm
- Series: TrenchFET?
- Drain to Source Breakdown Voltage: -60V
- Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
- Continuous Drain Current (ID): -4.7A
- Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 30V
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