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- Manufacturer No：SI7121ADN-T1-GE3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：SI7121ADN-T1-GE3
- SKU：344007
- Description：MOSFET P-CH 30V D-S PPAK 1212-8
User Guide
User Guide
SI7121ADN-T1-GE3 Details
MOSFET P-CH 30V D-S PPAK 1212-8
SI7121ADN-T1-GE3 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Elements: 1
- ECCN Code: EAR99
- Lead Free: Lead Free
- Terminal Position: DUAL
- Number of Terminations: 5
- Published: 2011
- Factory Lead Time: 14 Weeks
- REACH SVHC: Unknown
- Element Configuration: Single
- Terminal Form: FLAT
- Transistor Application: SWITCHING
- Pulsed Drain Current-Max (IDM): 50A
- Fall Time (Typ): 10 ns
- FET Type: P-Channel
- Threshold Voltage: -2.5V
- Drain to Source Breakdown Voltage: -30V
- Vgs (Max): ±25V
- Operating Temperature: -50°C~150°C TJ
- Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
- Current - Continuous Drain (Id) @ 25°C: 12A Ta
- Rise Time: 34ns
- Rds On (Max) @ Id, Vgs: 15m Ω @ 7A, 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1870pF @ 15V
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Number of Channels: 1
- JESD-609 Code: e3
- Number of Pins: 8
- Peak Reflow Temperature (Cel): 260
- Terminal Finish: Matte Tin (Sn)
- Time@Peak Reflow Temperature-Max (s): 30
- Gate to Source Voltage (Vgs): 25V
- Transistor Element Material: SILICON
- Drain to Source Voltage (Vdss): 30V
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- Case Connection: DRAIN
- Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250μA
- Series: TrenchFET?
- Turn-Off Delay Time: 24 ns
- Turn On Delay Time: 38 ns
- Package / Case: PowerPAK? 1212-8
- JESD-30 Code: S-PDSO-F5
- Resistance: 12.5mOhm
- Continuous Drain Current (ID): -18A
- Power Dissipation-Max: 3.5W Ta 27.8W Tc
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