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- Manufacturer No：SIR662DP-T1-GE3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：SIR662DP-T1-GE3
- SKU：344031
- Description：Trans MOSFET N-CH 60V 35.8A 8-Pin PowerPAK SO T/R
User Guide
User Guide
SIR662DP-T1-GE3 Details
Trans MOSFET N-CH 60V 35.8A 8-Pin PowerPAK SO T/R
SIR662DP-T1-GE3 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Elements: 1
- ECCN Code: EAR99
- Radiation Hardening: No
- Number of Pins: 8
- Terminal Position: DUAL
- Drain to Source Voltage (Vdss): 60V
- Number of Terminations: 5
- Time@Peak Reflow Temperature-Max (s): 30
- REACH SVHC: Unknown
- Element Configuration: Single
- Operating Temperature: -55°C~150°C TJ
- FET Type: N-Channel
- Transistor Application: SWITCHING
- Vgs (Max): ±20V
- Case Connection: DRAIN
- Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
- Series: TrenchFET?
- Package / Case: PowerPAK? SO-8
- Weight: 506.605978mg
- Current - Continuous Drain (Id) @ 25°C: 60A Tc
- JESD-30 Code: R-XDSO-C5
- Power Dissipation-Max: 6.25W Ta 104W Tc
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Number of Channels: 1
- Pbfree Code: yes
- Lead Free: Lead Free
- Pin Count: 8
- Peak Reflow Temperature (Cel): 260
- DS Breakdown Voltage-Min: 60V
- Published: 2011
- Factory Lead Time: 14 Weeks
- Transistor Element Material: SILICON
- Gate to Source Voltage (Vgs): 20V
- Threshold Voltage: 1V
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- Terminal Form: C BEND
- Continuous Drain Current (ID): 60A
- Vgs(th) (Max) @ Id: 2.5V @ 250μA
- Subcategory: FET General Purpose Powers
- Resistance: 2.7MOhm
- Nominal Vgs: 1 V
- Power Dissipation: 6.25W
- Gate Charge (Qg) (Max) @ Vgs: 96nC @ 10V
- Rds On (Max) @ Id, Vgs: 2.7m Ω @ 20A, 10V
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