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- Manufacturer No：SI7431DP-T1-GE3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：SI7431DP-T1-GE3
- SKU：344207
- Description：MOSFET P-CH 200V 2.2A PPAK SO-8
User Guide
User Guide
SI7431DP-T1-GE3 Details
MOSFET P-CH 200V 2.2A PPAK SO-8
SI7431DP-T1-GE3 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Elements: 1
- ECCN Code: EAR99
- Radiation Hardening: No
- Lead Free: Lead Free
- Number of Pins: 8
- Terminal Position: DUAL
- Peak Reflow Temperature (Cel): 260
- Drain to Source Voltage (Vdss): 200V
- Time@Peak Reflow Temperature-Max (s): 40
- Transistor Element Material: SILICON
- Gate to Source Voltage (Vgs): 20V
- Length: 4.9mm
- Pulsed Drain Current-Max (IDM): 30A
- Operating Mode: ENHANCEMENT MODE
- Terminal Form: C BEND
- Case Connection: DRAIN
- Vgs(th) (Max) @ Id: 4V @ 250μA
- Turn-Off Delay Time: 110 ns
- Drive Voltage (Max Rds On,Min Rds On): 6V 10V
- Package / Case: PowerPAK? SO-8
- Weight: 506.605978mg
- Fall Time (Typ): 49 ns
- Additional Feature: ULTRA-LOW RESISTANCE
- Width: 5.89mm
- Avalanche Energy Rating (Eas): 45 mJ
- Nominal Vgs: -4 V
- Current - Continuous Drain (Id) @ 25°C: 2.2A Ta
- Rds On (Max) @ Id, Vgs: 174m Ω @ 3.8A, 10V
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Number of Channels: 1
- Pbfree Code: yes
- JESD-609 Code: e3
- Contact Plating: Tin
- Pin Count: 8
- REACH SVHC: No SVHC
- Number of Terminations: 5
- Published: 2011
- Factory Lead Time: 14 Weeks
- Element Configuration: Single
- Operating Temperature: -55°C~150°C TJ
- Technology: MOSFET (Metal Oxide)
- Transistor Application: SWITCHING
- Vgs (Max): ±20V
- Subcategory: Other Transistors
- FET Type: P-Channel
- Series: TrenchFET?
- Turn On Delay Time: 23 ns
- Height: 1.04mm
- Power Dissipation: 1.9W
- Threshold Voltage: -4V
- Rise Time: 49 ns
- Drain to Source Breakdown Voltage: -200V
- JESD-30 Code: R-XDSO-C5
- Power Dissipation-Max: 1.9W Ta
- Gate Charge (Qg) (Max) @ Vgs: 135nC @ 10V
- Continuous Drain Current (ID): -2.2A
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