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- Manufacturer No：SI7119DN-T1-E3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：SI7119DN-T1-E3
- SKU：276278
- Description：MOSFET P-CH 200V 3.8A 1212-8
User Guide
User Guide
SI7119DN-T1-E3 Details
MOSFET P-CH 200V 3.8A 1212-8
SI7119DN-T1-E3 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Elements: 1
- ECCN Code: EAR99
- Radiation Hardening: No
- Lead Free: Lead Free
- Pin Count: 8
- Published: 2013
- Number of Terminations: 5
- Terminal Finish: Matte Tin (Sn)
- Factory Lead Time: 14 Weeks
- Transistor Element Material: SILICON
- Gate to Source Voltage (Vgs): 20V
- Transistor Application: SWITCHING
- Vgs (Max): ±20V
- Subcategory: Other Transistors
- Length: 3.05mm
- FET Type: P-Channel
- Fall Time (Typ): 12 ns
- Series: TrenchFET?
- Drive Voltage (Max Rds On,Min Rds On): 6V 10V
- Rise Time: 11ns
- Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
- Operating Temperature: -50°C~150°C TJ
- Drain to Source Breakdown Voltage: -200V
- Power Dissipation-Max: 3.7W Ta 52W Tc
- Continuous Drain Current (ID): -3.8A
- Input Capacitance (Ciss) (Max) @ Vds: 666pF @ 50V
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Number of Channels: 1
- Pbfree Code: yes
- JESD-609 Code: e3
- Number of Pins: 8
- Terminal Position: DUAL
- Peak Reflow Temperature (Cel): 260
- Drain to Source Voltage (Vdss): 200V
- Time@Peak Reflow Temperature-Max (s): 40
- Pulsed Drain Current-Max (IDM): 5A
- Element Configuration: Single
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- Terminal Form: C BEND
- Case Connection: DRAIN
- Width: 3.05mm
- Vgs(th) (Max) @ Id: 4V @ 250μA
- Turn On Delay Time: 9 ns
- Turn-Off Delay Time: 27 ns
- Height: 1.04mm
- Resistance: 1.05Ohm
- Power Dissipation: 3.7W
- Package / Case: PowerPAK? 1212-8
- JESD-30 Code: S-XDSO-C5
- Current - Continuous Drain (Id) @ 25°C: 3.8A Tc
- Rds On (Max) @ Id, Vgs: 1.05 Ω @ 1A, 10V
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