SUP28N15-52-E3Vishay Siliconix
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    • Manufacturer No：
      SUP28N15-52-E3
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
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    • SKU：
      346532
    • Description：
      MOSFET N-CH 150V 28A TO220AB
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    • Manufacturer No：
      SUP28N15-52-E3
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      SUP28N15-52-E3
    • SKU：
      346532
    • Description：
      MOSFET N-CH 150V 28A TO220AB

    User Guide

    User Guide

    SUP28N15-52-E3 Details

    MOSFET N-CH 150V 28A TO220AB

    SUP28N15-52-E3 Specification Parameters

    • RoHS Status: ROHS3 Compliant
    • Mounting Type: Through Hole
    • Packaging: Tape & Reel (TR)
    • Radiation Hardening: No
    • Part Status: Obsolete
    • Published: 2011
    • Drain to Source Breakdown Voltage: 150V
    • Element Configuration: Single
    • FET Type: N-Channel
    • Operating Temperature: -55°C~175°C TJ
    • Package / Case: TO-220-3
    • Turn-Off Delay Time: 25 ns
    • Fall Time (Typ): 60 ns
    • Series: TrenchFET?
    • Power Dissipation: 3.75W
    • Vgs(th) (Max) @ Id: 4.5V @ 250μA
    • Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 1725pF @ 25V
    • Power Dissipation-Max: 3.75W Ta 120W Tc
    • Rds On (Max) @ Id, Vgs: 52mOhm @ 5A, 10V
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mount: Through Hole
    • Number of Elements: 1
    • Min Operating Temperature: -55°C
    • Number of Pins: 3
    • Drain to Source Voltage (Vdss): 150V
    • Max Operating Temperature: 175°C
    • Gate to Source Voltage (Vgs): 20V
    • Technology: MOSFET (Metal Oxide)
    • Vgs (Max): ±20V
    • Supplier Device Package: TO-220AB
    • Turn On Delay Time: 15 ns
    • Rise Time: 70ns
    • Continuous Drain Current (ID): 28A
    • Drive Voltage (Max Rds On,Min Rds On): 6V 10V
    • Drain to Source Resistance: 52mOhm
    • Current - Continuous Drain (Id) @ 25°C: 28A Tc
    • Rds On Max: 52 mΩ
    • Input Capacitance: 1.725nF
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