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  • Manufacturer No:
    SI7336ADP-T1-E3
  • Manufacturer:
    Vishay Siliconix
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    Get the PDF file
  • SKU:
    346643
  • Description:
    MOSFET N-CH 30V 30A PPAK SO-8
  • Quantity:
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Inventory:18682
  • Qty Unit Price price
  • 1 $289.29 $289.29
  • 10 $286.425 $2864.25
  • 100 $283.589 $28358.9
  • 1000 $280.781 $280781
  • 10000 $278 $2780000

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  • Manufacturer No:
    SI7336ADP-T1-E3
  • Manufacturer:
    Vishay Siliconix
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    SI7336ADP-T1-E3
  • SKU:
    346643
  • Description:
    MOSFET N-CH 30V 30A PPAK SO-8

SI7336ADP-T1-E3 Details

MOSFET N-CH 30V 30A PPAK SO-8

SI7336ADP-T1-E3 Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mount: Surface Mount
  • Number of Elements: 1
  • ECCN Code: EAR99
  • Radiation Hardening: No
  • Lead Free: Lead Free
  • Number of Pins: 8
  • Terminal Position: DUAL
  • Number of Terminations: 5
  • Factory Lead Time: 14 Weeks
  • REACH SVHC: Unknown
  • Element Configuration: Single
  • Drain to Source Breakdown Voltage: 30V
  • Threshold Voltage: 1V
  • Length: 4.9mm
  • Continuous Drain Current (ID): 30A
  • Operating Mode: ENHANCEMENT MODE
  • Terminal Form: C BEND
  • Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
  • Vgs(th) (Max) @ Id: 3V @ 250μA
  • Turn-Off Delay Time: 90 ns
  • Series: TrenchFET?
  • Fall Time (Typ): 32 ns
  • Height: 1.04mm
  • Weight: 506.605978mg
  • Additional Feature: ULTRA-LOW RESISTANCE
  • Power Dissipation: 5.4W
  • Current - Continuous Drain (Id) @ 25°C: 30A Ta
  • Rds On (Max) @ Id, Vgs: 3m Ω @ 25A, 10V
  • Power Dissipation-Max: 5.4W Ta
  • RoHS Status: ROHS3 Compliant
  • Mounting Type: Surface Mount
  • Packaging: Tape & Reel (TR)
  • Number of Channels: 1
  • Pbfree Code: yes
  • JESD-609 Code: e3
  • Contact Plating: Tin
  • Pin Count: 8
  • Peak Reflow Temperature (Cel): 260
  • Time@Peak Reflow Temperature-Max (s): 30
  • Published: 2009
  • Transistor Element Material: SILICON
  • Gate to Source Voltage (Vgs): 20V
  • Operating Temperature: -55°C~150°C TJ
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Transistor Application: SWITCHING
  • Vgs (Max): ±20V
  • Case Connection: DRAIN
  • Pulsed Drain Current-Max (IDM): 70A
  • Resistance: 3mOhm
  • Rise Time: 16 ns
  • Turn On Delay Time: 24 ns
  • Subcategory: FET General Purpose Powers
  • Package / Case: PowerPAK? SO-8
  • Nominal Vgs: 1 V
  • Width: 5.89mm
  • JESD-30 Code: R-XDSO-C5
  • Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 5600pF @ 15V

Excellent

Based on reviews

Excellent

Based on reviews

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